A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process

Y. Akasaka, K. Miyagawa, H. Syoji, O. Ogawa, T. Kawahara, A. Horiuchi, R. Mitsuhashi, T. Maeda, A. Muto, N. Kasai, M. Yasuhira, T. Arikado
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Abstract

The V/sub th/ shift of a poly-Si/high-k MISFET has been reported. The observed V/sub t/h of p/sup +/ poly-Si/HfAlO/sub x/ or HfSiO/sub x/ is much higher than that of the p/sup +/ poly/SiON MISFET. The controlled V/sub th/ of the PMISFET is strongly required for the application of high-k insulators. In this study, we fabricated HfAlO/sub x/ MISFETs with n/sup +//p/sup +/ poly-Si and TiN gate electrodes by using the same "replacement gate" process. We found that the difference of V/sub fb/ between n/sup +/ poly-Si-/HfAlOx and p/sup +/ poly-Si/HfAlO/sub x/ systems is independent of channel types and much smaller than 1 V i.e. the theoretical difference between the work function of n/sup +/ and p/sup +/ Si. On the other hand, the TiN/HfAlO/sub x/ system shows the appropriate V/sub fb/ expected from work function.
替换栅法制备n+/p+多晶硅和TiN栅电极的hhfalox misfet的V/sub / shift研究
已经报道了多晶硅/高k MISFET的V/sub / shift。观察到p/sup +/ poly- si /HfAlO/sub x/或HfSiO/sub x/的V/sub t/h远高于p/sup +/ poly/SiON MISFET。PMISFET的可控V/sub /对于高k绝缘子的应用是非常必要的。在本研究中,我们采用相同的“替换栅”工艺,用n/sup +//p/sup +/多晶硅和TiN栅极制备了HfAlO/sub x/ misfet。我们发现n/sup +/ poly-Si-/HfAlO和p/sup +/ poly-Si/HfAlO/sub x/系统之间的V/sub fb/差异与通道类型无关,并且远小于1 V,即n/sup +/和p/sup +/ Si的功函数之间的理论差异。另一方面,TiN/HfAlO/sub x/系统显示了从功函数期望的适当V/sub fb/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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