多晶硅/HfAlOx栅极堆界面层热稳定性的改善

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159203

R. Mitsuhashi, A. Horiuchi, A. Uedono, K. Torii

{"title":"多晶硅/HfAlOx栅极堆界面层热稳定性的改善","authors":"R. Mitsuhashi, A. Horiuchi, A. Uedono, K. Torii","doi":"10.1109/IWGI.2003.159203","DOIUrl":null,"url":null,"abstract":"In this paper we investigate the influence of O/sub 2/ partial pressure on the IL thickness during post high-k deposition annealing. The effect of high temperature annealing after IL formation on the oxidation resistance of the IL is also reported.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks\",\"authors\":\"R. Mitsuhashi, A. Horiuchi, A. Uedono, K. Torii\",\"doi\":\"10.1109/IWGI.2003.159203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we investigate the influence of O/sub 2/ partial pressure on the IL thickness during post high-k deposition annealing. The effect of high temperature annealing after IL formation on the oxidation resistance of the IL is also reported.\",\"PeriodicalId\":221442,\"journal\":{\"name\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWGI.2003.159203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了高k沉积后退火过程中O/sub /分压对IL厚度的影响。本文还报道了IL形成后的高温退火对IL抗氧化性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks

In this paper we investigate the influence of O/sub 2/ partial pressure on the IL thickness during post high-k deposition annealing. The effect of high temperature annealing after IL formation on the oxidation resistance of the IL is also reported.

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来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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