氮化硅帽对HfO2栅堆中NBTI和费米钉扎的影响

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 1900-01-01 DOI:10.1109/IWGI.2003.159174

T. Sasaki, F. Ootsuka, T. Hoshi, T. Kawahara, T. Maeda, M. Yasuhira, T. Arikado

{"title":"氮化硅帽对HfO2栅堆中NBTI和费米钉扎的影响","authors":"T. Sasaki, F. Ootsuka, T. Hoshi, T. Kawahara, T. Maeda, M. Yasuhira, T. Arikado","doi":"10.1109/IWGI.2003.159174","DOIUrl":null,"url":null,"abstract":"In this paper, we report the improvements in the interfacial reaction between the gate dielectric and the gate electrode by adding SiN cap layer on HfO/sub 2/. We also report the drastic improvements in the gate leakage, V/sub th/ shift and NBTI.","PeriodicalId":221442,"journal":{"name":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks\",\"authors\":\"T. Sasaki, F. Ootsuka, T. Hoshi, T. Kawahara, T. Maeda, M. Yasuhira, T. Arikado\",\"doi\":\"10.1109/IWGI.2003.159174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the improvements in the interfacial reaction between the gate dielectric and the gate electrode by adding SiN cap layer on HfO/sub 2/. We also report the drastic improvements in the gate leakage, V/sub th/ shift and NBTI.\",\"PeriodicalId\":221442,\"journal\":{\"name\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWGI.2003.159174\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWGI.2003.159174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了在HfO/ sub2 /上添加SiN帽层对栅极电介质和栅极之间的界面反应的改善。我们还报告了栅极泄漏，V/sub / shift和NBTI的显著改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks

In this paper, we report the improvements in the interfacial reaction between the gate dielectric and the gate electrode by adding SiN cap layer on HfO/sub 2/. We also report the drastic improvements in the gate leakage, V/sub th/ shift and NBTI.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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