替换栅法制备n+/p+多晶硅和TiN栅电极的hhfalox misfet的V/sub / shift研究

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159192

Y. Akasaka, K. Miyagawa, H. Syoji, O. Ogawa, T. Kawahara, A. Horiuchi, R. Mitsuhashi, T. Maeda, A. Muto, N. Kasai, M. Yasuhira, T. Arikado

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引用次数: 0

摘要

已经报道了多晶硅/高k MISFET的V/sub / shift。观察到p/sup +/ poly- si /HfAlO/sub x/或HfSiO/sub x/的V/sub t/h远高于p/sup +/ poly/SiON MISFET。PMISFET的可控V/sub /对于高k绝缘子的应用是非常必要的。在本研究中，我们采用相同的“替换栅”工艺，用n/sup +//p/sup +/多晶硅和TiN栅极制备了HfAlO/sub x/ misfet。我们发现n/sup +/ poly-Si-/HfAlO和p/sup +/ poly-Si/HfAlO/sub x/系统之间的V/sub fb/差异与通道类型无关，并且远小于1 V，即n/sup +/和p/sup +/ Si的功函数之间的理论差异。另一方面，TiN/HfAlO/sub x/系统显示了从功函数期望的适当V/sub fb/。

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A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process

The V/sub th/ shift of a poly-Si/high-k MISFET has been reported. The observed V/sub t/h of p/sup +/ poly-Si/HfAlO/sub x/ or HfSiO/sub x/ is much higher than that of the p/sup +/ poly/SiON MISFET. The controlled V/sub th/ of the PMISFET is strongly required for the application of high-k insulators. In this study, we fabricated HfAlO/sub x/ MISFETs with n/sup +//p/sup +/ poly-Si and TiN gate electrodes by using the same "replacement gate" process. We found that the difference of V/sub fb/ between n/sup +/ poly-Si-/HfAlOx and p/sup +/ poly-Si/HfAlO/sub x/ systems is independent of channel types and much smaller than 1 V i.e. the theoretical difference between the work function of n/sup +/ and p/sup +/ Si. On the other hand, the TiN/HfAlO/sub x/ system shows the appropriate V/sub fb/ expected from work function.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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