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高介电常数介电氧化物的原子层沉积化学、机理及相关物理性质

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159195
K. Kukli
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引用次数: 2

摘要

本文研究了高介电常数介质氧化物HfO/sub 2/和ZrO/sub 2/薄膜的原子层沉积化学、机理及相关物理性质。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides
In this paper, atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides HfO/sub 2/ and ZrO/sub 2/ thin films were studied.
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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
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