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金属有机化学气相沉积法制备氧化镧栅极绝缘子的Ru栅极电极

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159191
T. Shimizu, K. Ishii, E. Suzuki
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引用次数: 0

摘要

本文提出了钌金属栅极作为镧系氧化物栅极绝缘体，并展示了钌/镧系氧化物堆叠mosfet的令人满意的电学性能。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Ru gate electrode for a La-oxide gate insulator deposited by metalorganic chemical vapor deposition
In this work we propose the Ru metal gate for a lanthanide oxide gate insulator and show satisfactory electrical properties of Ru/La oxide stack MOSFETs.
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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
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