高真空Al吸附降解下垫层超薄SiO2薄膜的介电特性

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159173

M. Tanabe, M. Goto, A. Uedono, K. Yamabe

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引用次数: 0

摘要

利用MOS电容器研究了Al吸附和去除后SiO/ sub2 /薄膜的电学特性。Al吸附导致SiO/sub 2/变薄，泄漏电流增大。

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Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum

Electrical characteristics of underlying thin SiO/sub 2/ films after the Al adsorption and the following removal of it are investigated using MOS capacitors. Al adsorption caused the SiO/sub 2/ thinning and increases of leakage current.

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Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

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