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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

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Reverse recovery failure modes in modern fast recovery diodes 现代快速恢复二极管的反向恢复失效模式
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838776
Munaf T. A. Rahimo, N. Shammas
{"title":"Reverse recovery failure modes in modern fast recovery diodes","authors":"Munaf T. A. Rahimo, N. Shammas","doi":"10.1109/ICMEL.2000.838776","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838776","url":null,"abstract":"In this paper, reverse recovery failure modes in modern fast power diodes are investigated. By the aid of semiconductor device simulation tools, a better view is obtained for the physical process, and operating conditions at which both diode snappy recovery and dynamic avalanching phenomenas occur during the recovery period in modern high frequency power electronic applications. The paper shows that the control of the carrier gradient and the remaining stored charge in the drift region during the recovery phase influence both failure modes and determine if the diode exhibits a soft, snappy or dynamic avalanche recovery characteristics.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116654664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Analysis of the high bit-rate 1.55 /spl mu/m lightwave system with the limited P-i-N photodiode bandwidth 有限P-i-N光电二极管带宽下的高比特率1.55 /spl mu/m光波系统分析
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838763
M. Cvetković, P. Matavulj, J. Radunovic, A. Marinčić
{"title":"Analysis of the high bit-rate 1.55 /spl mu/m lightwave system with the limited P-i-N photodiode bandwidth","authors":"M. Cvetković, P. Matavulj, J. Radunovic, A. Marinčić","doi":"10.1109/ICMEL.2000.838763","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838763","url":null,"abstract":"We analyze the impact of the limited P-i-N photodiode bandwidth on the performance of the 1.55 /spl mu/m IM/DD (Intensity Modulation/Direct Detection) 10 Gb/s digital optical communication systems. The complete model of the optical communication system with the special accent on P-i-N photodiode is described. The computer simulation based on the developed model shows that the limited P-i-N photodetector bandwidth reduces the overshoot of the filtered signal at receiver. The proper selection of the P-i-N photodiode non-material parameters may improve the quality of signal detection at receiver side.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125725582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Crossing point current of power P-i-N diodes: impact of lifetime treatment 功率P-i-N二极管的交叉点电流:寿命处理的影响
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838768
J. Vobecký, P. Hazdra, O. Humbel, N. Galster
{"title":"Crossing point current of power P-i-N diodes: impact of lifetime treatment","authors":"J. Vobecký, P. Hazdra, O. Humbel, N. Galster","doi":"10.1109/ICMEL.2000.838768","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838768","url":null,"abstract":"Crossing point current of forward I-V curves at 25 and 125/spl deg/C was measured and simulated for 4.5 kV/320 A power P-i-N diodes irradiated by protons. To achieve agreement of electro-thermal simulation with experiment, temperature dependence of the capture coefficients C/sub n/ and C/sub p/ of the deep levels dominant in condition of heavy injection had to be taken into account. The proton irradiation is shown to decrease the crossing point current which is beneficial for paralleling of diodes under surge conditions.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125881008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Analytical expression for the breakdown voltage of the gated diodes 门控二极管击穿电压的解析表达式
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838778
Sang-Bok Yun, Yearn-Ik Choi
{"title":"Analytical expression for the breakdown voltage of the gated diodes","authors":"Sang-Bok Yun, Yearn-Ik Choi","doi":"10.1109/ICMEL.2000.838778","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838778","url":null,"abstract":"Analytical expression for the breakdown voltage of the gated diodes was derived in terms of the doping concentration, gate voltage and oxide thickness, and verified by two-dimensional device simulator, ATLAS. The proposed equation agrees well with simulation results within 5% average error when the gate voltage changes from -70 V to 130 V in case of N/sub D/=1/spl times/10/sup 15//cm/sup 3/ and agrees well with simulation results within 10% average error when the doping concentration changes from 5/spl times/10/sup 14//cm/sup 3/ to 2/spl times/10/sup 15//cm/sup 3/.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125075784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Selective area epitaxial growth of Hg/sub 1-x/Cd/sub x/Te by isothermal vapor-phase epitaxy Hg/sub - 1-x/Cd/sub -x/ Te的等温气相外延选择性区域生长
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840573
Z. Dinovic, V. Jovic, R. Petrovic
{"title":"Selective area epitaxial growth of Hg/sub 1-x/Cd/sub x/Te by isothermal vapor-phase epitaxy","authors":"Z. Dinovic, V. Jovic, R. Petrovic","doi":"10.1109/ICMEL.2000.840573","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840573","url":null,"abstract":"We used mechanical shadow masks, which are made by silicon micromachining, to obtain selective area epitaxial (SAE) growth of (Hg,Cd)Te on CdTe substrates. The layers were grown by isothermal vapor phase epitaxy (ISOVPE) from solid HgTe source. The grown mesa structures were compared with (Hg,Cd)Te layers obtained by SAE growth under similar conditions, within openings in SiO/sub x/ on the CdTe substrate. Also, it is possible to obtain better active area delineation of detector structure using SAE growth than by wet chemical etching.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129223736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A low loss Schottky diodes with a linearly graded doping profile using ion-implantation and out-diffusion from substrate 采用离子注入和从衬底向外扩散的低损耗肖特基二极管
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838775
Sung-Lyong Kim, Yearn-Ik Choi
{"title":"A low loss Schottky diodes with a linearly graded doping profile using ion-implantation and out-diffusion from substrate","authors":"Sung-Lyong Kim, Yearn-Ik Choi","doi":"10.1109/ICMEL.2000.838775","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838775","url":null,"abstract":"A low loss Schottky rectifier employing a linearly graded doping profile made by new method of epitaxial layer growth is proposed. The linearly graded doping profile is obtained by annealing and out-diffusion from antimony doped substrate after phosphorus ion-implantation. The characteristics of the Schottky diodes employing this method are verified by two dimensional simulation and measurement with SRP (Spreading Resistance Probe). In case of 30 V rated Schottky diodes, the current density of the proposed device is increased about 28% compared with that of the conventional device when forward voltage drop is 0.5 V.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124029794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The X-ray and UV controlled adjustment of MOSFET threshold voltage 利用x射线和紫外控制调节MOSFET的阈值电压
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840583
M. Levin, S. Kadmensky, V. Pershenkov
{"title":"The X-ray and UV controlled adjustment of MOSFET threshold voltage","authors":"M. Levin, S. Kadmensky, V. Pershenkov","doi":"10.1109/ICMEL.2000.840583","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840583","url":null,"abstract":"The technique for precise adjustment of MOS-devices threshold voltages using X-ray and UV irradiation is presented. The adjustment is based on formation of thermally stable charge in the phosphorus doped SiO/sub 2/ layers.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124238711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal analysis and modeling of hybrid power modules 混合动力模块热分析与建模
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838750
B. Radojcic, R. Ramović, O. Aleksic
{"title":"Thermal analysis and modeling of hybrid power modules","authors":"B. Radojcic, R. Ramović, O. Aleksic","doi":"10.1109/ICMEL.2000.838750","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838750","url":null,"abstract":"In this paper the results of thermal analysis and modeling in a hybrid power module are given. Experimental contribution is based on thermal measurements on the realized hybrid power module using a matrix of flip-chip sensors. Thermal measurements were done at different ambient temperatures and different hybrid module power values. Two-dimensional model includes temperature dependent heat conductance and specific heat and takes into account the geometry of the devices, the material thermal conductivity, different dissipation mechanisms, as well as all the possible ways to transfer the dissipated heat. Both the simulation and experimental results obtained are presented graphically. Finally, the temperature distributions obtained theoretically and experimentally are compared and analyzed.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"228 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115659577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-frequency effects of Al-lossy lines in MCM-D on silicon substrate 硅衬底上MCM-D中al损耗线的高频效应
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838799
M. Gospodinova, R. Arnaudov, V.S. Mollov, P. Philippov
{"title":"High-frequency effects of Al-lossy lines in MCM-D on silicon substrate","authors":"M. Gospodinova, R. Arnaudov, V.S. Mollov, P. Philippov","doi":"10.1109/ICMEL.2000.838799","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838799","url":null,"abstract":"This paper discusses an experimental investigation of the behavior of high-speed Si/SiO/sub 2//Al based microstrip, when an extra DC bias voltage is applied to the line. In order to reduce the insertion losses caused by the semiconductor substrate, we suggest a superposition of a DC biasing to the high-speed signal applied to the line. This way, the conductor line changes the surface properties of the semiconductor substrate. To provide the characterization of this effect a number of test structures containing a variety of microstrip asymmetric transmission lines were prepared. The obtained results suggest a way of controlling the performance and energy propagation of interconnects on semiconductor substrates. The studied effect can be successfully applied in high-speed blocks with tuning parameters.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115666005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of epitaxial Hg/sub 1-x/Cd/sub x/Te layers using the far infrared optical method 外延Hg/sub - 1-x/Cd/sub -x/ Te层的远红外光学表征
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840572
P. Nikolić, Z. Dinovic, K. Radulović, D. Vasiljević-Radović, S. Durić, P. Mihajlović, D. Siapkas, T. Zorba
{"title":"Characterization of epitaxial Hg/sub 1-x/Cd/sub x/Te layers using the far infrared optical method","authors":"P. Nikolić, Z. Dinovic, K. Radulović, D. Vasiljević-Radović, S. Durić, P. Mihajlović, D. Siapkas, T. Zorba","doi":"10.1109/ICMEL.2000.840572","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840572","url":null,"abstract":"Far infrared (FIR) reflectivity versus the wavelength, at room temperature, was measured for Hg/sub 0.8/Cd/sub 0.2/Te epitaxial layers grown on three CdTe semiinsulating substrata. The epitaxial single crystals were grown using vapour deposition techniques. The epitaxial film, grown on the best substratum, was successively etched with 0.2 % Br/sub 2/ methanol etchant. Far IR reflectivity diagrams for seven various thicknesses of Hg/sub 0.8/Cd/sub 0.2/Te film were measured. The experimental diagrams were numerically analyzed and it was shown that the values of optical transverse modes for both HgTe like and CdTe like modes were practically constant. This means that the composition of the epitaxial layer was unchangeable near the surface down to 0.9 /spl mu/m from the surface.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115309778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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