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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

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Capacitive microelectronic components on the basis of the composite materials 以电容性微电子元件为基础的复合材料
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838748
V. Paunovic, L. Vulićević, V. Dimić, D. Stefanovic
{"title":"Capacitive microelectronic components on the basis of the composite materials","authors":"V. Paunovic, L. Vulićević, V. Dimić, D. Stefanovic","doi":"10.1109/ICMEL.2000.838748","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838748","url":null,"abstract":"BaTiO/sub 3/- ceramic is one of the most important dielectric materials. Optimal sample properties for capacitive ceramic are obtained by isothermal sintering of barium titanate at 1380/spl deg/C/240 min. The possibility prognosis of composite dielectric material composed of a barium titanate and novolac (phenolformaldehyde) are examined, especially from the standpoint of their application in the technology as capacitors. Here, BaTiO/sub 3/ phase in the form of particle size less than 100 /spl mu/m is dispersed in homogenous organic matrix materials. Variation of some composite properties by change in volume ratio ceramic powder, and change of dielectric constant and microstructure of composite are examined. Above mentioned allow to establish the appropriate electrical model of corresponding electrical component was formed.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131582958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A method for pressure control in plasma processing 一种等离子体加工压力控制方法
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840570
Z. Zirojevic, M. Zlatanović
{"title":"A method for pressure control in plasma processing","authors":"Z. Zirojevic, M. Zlatanović","doi":"10.1109/ICMEL.2000.840570","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840570","url":null,"abstract":"A simple system for pressure control in a plasma processing unit for surface treatment of materials was described, The system consists of two thermal mass controllers for the working gas mixture adjustment at the vacuum chamber inlet and three on-off vacuum valves at the chamber outlet. An algorithm for computer control of the dynamic pressure in the process chamber at various working gas composition was described and the measured characteristics of a three valve throttling system given.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130832649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SOI devices and circuits SOI器件和电路
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838722
J. Colinge
{"title":"SOI devices and circuits","authors":"J. Colinge","doi":"10.1109/ICMEL.2000.838722","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838722","url":null,"abstract":"Different types of Silicon-on-Insulator (SOI) devices are described and their respective properties are compared. SOI technology is currently becoming mainstream in the field of low-voltage, low-power electronics, where supply voltages as low as 0.5 volt are used. SOI devices and substrates can be optimized to operate at gigahertz frequencies, which makes them a technology of choice for portable telecommunication systems. Some advanced SOI devices are discussed as well.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131049275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Cell design for boundary-scan implementation 边界扫描实现的单元设计
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838791
V. Panic, S. Jankovic, D. Milovanovic, V. Litovski
{"title":"Cell design for boundary-scan implementation","authors":"V. Panic, S. Jankovic, D. Milovanovic, V. Litovski","doi":"10.1109/ICMEL.2000.838791","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838791","url":null,"abstract":"This paper gives a new approach in cell design for boundary-scan implementation. After recalling on major problems in PCBs testing, a short overview of boundary-scan standard is given. Furthermore, logic level synthesis of boundary-scan cells are done. Logic level design of these cells are used for layout generation. From generated layout, netlist for each circuit is extracted, and after that simulated by Alecsis2.4. The simulation results are compared with expected values, and are presented in appropriate manner.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125328718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of ion-beam modified silicon by photoacoustic method 离子束修饰硅的光声研究
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840566
D. Todorović, P. Nikolić, J. Elazar, M. Smiljanić, A. Bojic̆ić, D. Vasiljević-Radović, K. Radulović
{"title":"Investigation of ion-beam modified silicon by photoacoustic method","authors":"D. Todorović, P. Nikolić, J. Elazar, M. Smiljanić, A. Bojic̆ić, D. Vasiljević-Radović, K. Radulović","doi":"10.1109/ICMEL.2000.840566","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840566","url":null,"abstract":"Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123703488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of microactuators for tactile graphic displays (State of the art and recent efforts) 触觉图形显示器微致动器的发展(最新进展)
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838756
W. Brenner, S. Mitic, R. Ouchkalov, G. Popovic, A. Vujanic, R. Medek
{"title":"Development of microactuators for tactile graphic displays (State of the art and recent efforts)","authors":"W. Brenner, S. Mitic, R. Ouchkalov, G. Popovic, A. Vujanic, R. Medek","doi":"10.1109/ICMEL.2000.838756","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838756","url":null,"abstract":"An overview of the state of the art principles that can be used for actuators in high-resolution tactile graphic displays is presented. Existing actuators used in commercially available tactile displays (electromagnetic or piezoelectric) have several disadvantages, and are not suitable for high resolution graphic displays. The actuators based on some of the presented, non-conventional principles in this paper can be smaller, cheaper, and more reliable.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116951405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Degradation of /spl alpha/-Si:H TFTs caused by electrostatic discharge 静电放电对/spl α /-Si:H tft的降解作用
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840589
N. Tošić, F. Kuper, T. Mouthaan
{"title":"Degradation of /spl alpha/-Si:H TFTs caused by electrostatic discharge","authors":"N. Tošić, F. Kuper, T. Mouthaan","doi":"10.1109/ICMEL.2000.840589","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840589","url":null,"abstract":"This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (/spl alpha/-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123826125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization and processing of thick film materials for MCM-C applications MCM-C应用厚膜材料的表征和加工
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838746
D. Jovanovic, D. Stojkovic, R. Ramović, M. Lutovac
{"title":"Characterization and processing of thick film materials for MCM-C applications","authors":"D. Jovanovic, D. Stojkovic, R. Ramović, M. Lutovac","doi":"10.1109/ICMEL.2000.838746","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838746","url":null,"abstract":"The application of the new low-cost series thick film materials for multilayer structure with four metal layers is discussed in this paper. Processing of multilayer test structure used to evaluate properties of new materials for HDI MCM (High Density Integration Multi Chip Modules) applications is described. Electrical and physical characterization of multilayer thick film materials based on alumina substrate is detailed. Test results with DuPonts QM silver-based system materials for low-cost multilayers have provided design and process recommendations.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122126242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferropiezoelectric array as a primary sensor for processing of tactile information 铁压电阵列作为触觉信息处理的主要传感器
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838766
V. Todorova
{"title":"Ferropiezoelectric array as a primary sensor for processing of tactile information","authors":"V. Todorova","doi":"10.1109/ICMEL.2000.838766","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838766","url":null,"abstract":"This work has investigated and developed tactile ferropiezoelectric array sensors. The nonresonance piezoelectric transformers (NRPT) with a sectional generator electrode are basic functional elements of these arrays. The running bulk acoustical wave (RBAW) has scanned the tactile effect on the array field. Electromechanical processes in the NRPT with RBAW have been studied by the methods of mathematical modelling and simulation. Design methods for this type of tactile arrays have also been suggested. These are outlined on the basis of the criteria for estimation of the arrays on the functional, constructive and organisation levels of the sensors taking into account their particular applications. The correct choice of the array design parameters enables to develop various constructions of the ferropiezoelectric tactile matrix sensors with different organisation depending on the specific input-output interface circuits of the system for processing of tactile information.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116917845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Vacuum-silicon solid microwave diodes and triodes based on P/sup ++/-N and on tungsten cathodes 真空硅固体微波二极管和三极管基于P/sup ++/-N和钨阴极
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838755
S. Koshevaya, V. Kanevsky, M. Tecpoyoti-T., E. Gutiérrez-D, G.N. Buriak, V. E. Chayka
{"title":"Vacuum-silicon solid microwave diodes and triodes based on P/sup ++/-N and on tungsten cathodes","authors":"S. Koshevaya, V. Kanevsky, M. Tecpoyoti-T., E. Gutiérrez-D, G.N. Buriak, V. E. Chayka","doi":"10.1109/ICMEL.2000.838755","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838755","url":null,"abstract":"This work reports the analysis of vacuum-solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small losses of the multiplication. Additionally, the analysis of the basic parameters of these vacuum-solids microwave diodes with different types of cathodes, shows that diodes with a back voltage P/sup ++/-N cathode have a wide frequency band, but an efficiency smaller than that of tungsten diodes.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115452925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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