静电放电对/spl α /-Si:H tft的降解作用

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840589

N. Tošić, F. Kuper, T. Mouthaan

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引用次数: 0

摘要

本文给出了静电放电(ESD)脉冲对非晶硅薄膜晶体管(/spl α /-Si:H TFT)性能影响的实验分析结果。介绍了电子迁移率的退化和阈值电压的研究进展。进行了失效分析，确定了两种失效机制。

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Degradation of /spl alpha/-Si:H TFTs caused by electrostatic discharge

This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (/spl alpha/-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified.

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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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