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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

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Mixed-mode device simulation 混合模式器件仿真
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.840528
Tibor Grasser, Siegfried Selberherr
{"title":"Mixed-mode device simulation","authors":"Tibor Grasser, Siegfried Selberherr","doi":"10.1109/ICMEL.2000.840528","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840528","url":null,"abstract":"In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126722654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 70
Silicon microstructure for precise measurements of mechanical moments 硅微结构用于机械力矩的精确测量
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.838754
A. Vujanic, N. Adamovic, M. Jakovljević, W. Brenner, G. Popovic, H. Detter
{"title":"Silicon microstructure for precise measurements of mechanical moments","authors":"A. Vujanic, N. Adamovic, M. Jakovljević, W. Brenner, G. Popovic, H. Detter","doi":"10.1109/ICMEL.2000.838754","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838754","url":null,"abstract":"In this paper we report the use of silicon bulk micromachining for inexpensive fabrication of miniature silicon springs used as sensing elements in a system for measurement of small moments. Such \"torsional microsprings\" twist when mechanical moment is applied at the central part of the structure. The springs are designed and fabricated in a way where it is relatively easy to technologically control all geometrical dimensions in micrometer range. Further on, since the spring is made from silicon, the mechanical hysteresis is negligible, which is very important when measuring small moments.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130079326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An improved technology of 6H-SiC power diodes 6H-SiC功率二极管的改进技术
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.838770
M. Badila, G. Brezeanu, G. Dilimot, J. Millán, P. Godignon, J. Chante, M. Locatelli, N. Savkina, A. Lebedev
{"title":"An improved technology of 6H-SiC power diodes","authors":"M. Badila, G. Brezeanu, G. Dilimot, J. Millán, P. Godignon, J. Chante, M. Locatelli, N. Savkina, A. Lebedev","doi":"10.1109/ICMEL.2000.838770","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838770","url":null,"abstract":"An elaborated technology of SiC pn junction is proposed. A cellular structure for 6H-SiC power devices is designed and optimized. Based on a matrix structure with 0.16 mm/sup 2/ cell area medium power (600 V breakdown voltage and 1 A at forward voltage of 5 V) pn diode has been fabricated and tested. The micropipes effect is eliminated.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127010710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The design and development of a novel flyback planar transformer for high frequency switch mode DC-DC converter applications-Part 1 一种用于高频开关型DC-DC变换器的新型反激式平面变压器的设计与研制——第一部分
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.838741
K. Arshak, B. AlMukhtar
{"title":"The design and development of a novel flyback planar transformer for high frequency switch mode DC-DC converter applications-Part 1","authors":"K. Arshak, B. AlMukhtar","doi":"10.1109/ICMEL.2000.838741","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838741","url":null,"abstract":"In this work a step by step planar transformer design procedure for Flyback switch-mode DC-DC converter application is presented. This transformer has a maximum dimension of 2 cm/spl times/2 cm/spl times/0.4 cm aiming to achieve an efficiency of 99% at an operating frequency of 500 kHz. This planar transformer is designed specially for thick film technology development.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121761861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Investigation of the thermal performance of micro-whisker structured silicon heatspreaders for power devices 功率器件用微晶须结构硅散热器热性能研究
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.838779
J. Nicolics, G. Hanreich, G. Stangl
{"title":"Investigation of the thermal performance of micro-whisker structured silicon heatspreaders for power devices","authors":"J. Nicolics, G. Hanreich, G. Stangl","doi":"10.1109/ICMEL.2000.838779","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838779","url":null,"abstract":"Driving forces for developments in power electronics are the continuing miniaturization and enhancement of power densities. New packaging concepts are required allowing to dissipate loss power density levels of several hundred W/cm/sup 2/ at operation temperatures as low as possible. A promising attempt to decrease the thermal resistance to the ambient is the development of silicon substrates structured with microwhiskers perpendicular to its surface. An industrial application of this new heatspreader technology in power electronic modules makes necessary the specification of the substrate properties. In this work a new method for determination of thermal qualities based on laser heating of the heatspreader, surface temperature measurement by thermovision, and dynamic reverse modeling is described. For numerical determination of the thermal characteristics the measured data are evaluated with the help of a thermal model of the heatspreaders under various boundary conditions. The respective temperature distributions are calculated with a new simulation tool using an alternating direction implicit algorithm (ADI-method). Results obtained from heatspreaders with microwhisker treatment are compared with those from reference samples with a polished surface. Based on these results a view on future applications for power electronics assemblies are derived.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121867823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Evaluation of electron pressure effect in low-field drain region of submicron GaAs MESFET using ensemble Monte Carlo simulation 用集成蒙特卡罗模拟评价亚微米GaAs MESFET低场漏极区的电子压力效应
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.840542
Y. Yamada, M. Hasegawa
{"title":"Evaluation of electron pressure effect in low-field drain region of submicron GaAs MESFET using ensemble Monte Carlo simulation","authors":"Y. Yamada, M. Hasegawa","doi":"10.1109/ICMEL.2000.840542","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840542","url":null,"abstract":"The ensemble Monte Carlo simulation is carried out to study effects of the electron pressure term on the mean electron velocity in the GaAs MESFET with a gate length of 0.2 /spl mu/m. The four components of the mean electron velocity are separately evaluated on the main channel. It is found that the electron pressure component is comparable to the drift one or exceeds it in the low-field drain region. Including the electron pressure component into the drift one produces a large deviation from the Einstein relation and a too large effective mobility of 15000-30000 cm/sup 2//Vsec. So it is concluded that any device model for the submicron GaAs MESFET should not be based on a drift-diffusion model, but on a model explicitly including the electron pressure term.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128315000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microelectronics and photonics-the future 微电子和光子学——未来
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.840525
E. Suhir
{"title":"Microelectronics and photonics-the future","authors":"E. Suhir","doi":"10.1109/ICMEL.2000.840525","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840525","url":null,"abstract":"In this overview we discuss the major trends in microelectronics, photonics, and some other areas of the \"high-technology\" engineering. We will describe which of the new and emerging directions and technologies look most promising, and what challenges a mechanical-materials-and-reliability engineer will most likely to encounter in connection with these technologies. It should be pointed out that to be a \"prophet\" in predicting the future of the \"high-technology\" is not as hard as it may seem at the first glance: unless something absolutely unexpected happens, the current trends indeed determine what will take place in the foreseeable future. This is due to the tremendous momentum of these trends. Such a momentum is supported by the existing knowledge, powerful customer demand, and the enormous investments of capital and human resources.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127418526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
General method in synthesis of pass-transistor circuits 通管电路合成的一般方法
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.838785
Dejan Markovic, Borivoje Nikolic, V. Oklobdzija
{"title":"General method in synthesis of pass-transistor circuits","authors":"Dejan Markovic, Borivoje Nikolic, V. Oklobdzija","doi":"10.1109/ICMEL.2000.838785","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838785","url":null,"abstract":"A new pass-transistor circuit synthesis method is presented in this paper. Several pass-transistor logic families were introduced recently, but no systematic synthesis method is available that takes into account impact of signal arrangement on circuit performance. The method is applied to generation of basic two-input and three-input logic gates in CPL, DPL and DVL, but it is general and can be expanded to synthesis of a random pass-transistor circuit.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127099389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 83
Computer-aided test flow in core-based design 基于核心设计的计算机辅助测试流程
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.838790
V. Zivkovic, R. Tangelder, H. Kerkhoff
{"title":"Computer-aided test flow in core-based design","authors":"V. Zivkovic, R. Tangelder, H. Kerkhoff","doi":"10.1109/ICMEL.2000.838790","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838790","url":null,"abstract":"This paper copes with the test-pattern generation and fault coverage determination in the core based design. The basic core-test strategy that one has to apply in the core-based design is stated in this work. A Computer-Aided Test (CAT) flow is proposed resulting in accurate fault coverage of embedded cores. The CAT now is applied to a few cores within the Philips Core Test Pilot IC project.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126008435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Amorphous silicon detector and thin film transistor technology for large area imaging of X-rays 用于x射线大面积成像的非晶硅探测器和薄膜晶体管技术
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.840533
Arokia Nathan, R. Murthy, Q. Ma, B. Park, H. Pham, A. Sazonov
{"title":"Amorphous silicon detector and thin film transistor technology for large area imaging of X-rays","authors":"Arokia Nathan, R. Murthy, Q. Ma, B. Park, H. Pham, A. Sazonov","doi":"10.1109/ICMEL.2000.840533","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840533","url":null,"abstract":"This paper will review amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability. Also, issues pertinent to thin film transistor stability will be presented along with optimization of materials and processing conditions for reduced V/sub T/-shift and leakage current. Selected results are shown for X-ray and optical detectors, thin film transistors, and integrated X-ray pixel structures. Extension of the current fabrication processes to low (<100/spl deg/C) temperature, enabling fabrication of thin film electronics on flexible (polymer) substrates, will also be discussed along with preliminary results.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128957382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 59
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