{"title":"混合模式器件仿真","authors":"Tibor Grasser, Siegfried Selberherr","doi":"10.1109/ICMEL.2000.840528","DOIUrl":null,"url":null,"abstract":"In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"70","resultStr":"{\"title\":\"Mixed-mode device simulation\",\"authors\":\"Tibor Grasser, Siegfried Selberherr\",\"doi\":\"10.1109/ICMEL.2000.840528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.\",\"PeriodicalId\":215956,\"journal\":{\"name\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"70\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2000.840528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2000.840528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.