混合模式器件仿真

Tibor Grasser, Siegfried Selberherr
{"title":"混合模式器件仿真","authors":"Tibor Grasser, Siegfried Selberherr","doi":"10.1109/ICMEL.2000.840528","DOIUrl":null,"url":null,"abstract":"In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"70","resultStr":"{\"title\":\"Mixed-mode device simulation\",\"authors\":\"Tibor Grasser, Siegfried Selberherr\",\"doi\":\"10.1109/ICMEL.2000.840528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.\",\"PeriodicalId\":215956,\"journal\":{\"name\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"70\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2000.840528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2000.840528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 70

摘要

在混合模式器件仿真中,半导体器件基本输运方程的求解直接嵌入到电路方程的求解过程中。因此避免了紧凑的建模,获得了更高的精度。我们回顾了混合模式器件仿真的最新进展。此外,我们还介绍了最近的成就,特别是收敛加速技术和处理电热问题的方法。重点放在示例部分,以演示所建议的技术的价值和有用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mixed-mode device simulation
In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信