An improved technology of 6H-SiC power diodes

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI:10.1109/ICMEL.2000.838770

M. Badila, G. Brezeanu, G. Dilimot, J. Millán, P. Godignon, J. Chante, M. Locatelli, N. Savkina, A. Lebedev

引用次数: 2

Abstract

An elaborated technology of SiC pn junction is proposed. A cellular structure for 6H-SiC power devices is designed and optimized. Based on a matrix structure with 0.16 mm/sup 2/ cell area medium power (600 V breakdown voltage and 1 A at forward voltage of 5 V) pn diode has been fabricated and tested. The micropipes effect is eliminated.

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6H-SiC功率二极管的改进技术

提出了一种精细的SiC pn结技术。设计并优化了用于6H-SiC功率器件的蜂窝状结构。基于0.16 mm/sup / cell面积的矩阵结构，制作了中功率(600 V击穿电压和5 V正向电压下的1 a) pn二极管并进行了测试。消除了微管效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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