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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

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Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC n型4H-SiC上NO氮化栅氧化物的Fowler-Nordheim注入分析
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840582
Hui-feng Li, S. Dimitrijev, D. Sweatman, H. B. Harrison
{"title":"Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC","authors":"Hui-feng Li, S. Dimitrijev, D. Sweatman, H. B. Harrison","doi":"10.1109/ICMEL.2000.840582","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840582","url":null,"abstract":"F-N injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300/spl deg/C. The results show that NO nitridation has a positive effect on the Fowler-Nordheim electron injection at high electric fields. The electron injection barrier height is very close to the theoretical value at room temperature. The temperature dependence of the electron injection barrier height is reduced by nitridation.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120936491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An analytical model for electrical characteristics of short geometry LDD and short channel FOLD MOSFETs 短几何LDD和短沟道FOLD mosfet的电特性分析模型
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840558
A. Kumar, E. Kalra, S. Haldar, R. Gupta
{"title":"An analytical model for electrical characteristics of short geometry LDD and short channel FOLD MOSFETs","authors":"A. Kumar, E. Kalra, S. Haldar, R. Gupta","doi":"10.1109/ICMEL.2000.840558","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840558","url":null,"abstract":"An analytical model for electrical characteristics of short geometry LDD MOSFET and short channel FOLD MOSFET is developed. The results so obtained are in good agreement with the experimental data showing the validity of the model in the submicrometer range.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123206498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micromachined experimental structure for optimization of multilayer p/sup +/Si/(metal, semiconductor) thermopile IR detectors and thermal converters 多层p/sup +/Si/(金属，半导体)热电堆红外探测器和热转换器的微机械实验结构优化
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838761
D. Randjelović, Z. Djuric, R. Petrovic, Ž. Lazić, T. Dankovic
{"title":"Micromachined experimental structure for optimization of multilayer p/sup +/Si/(metal, semiconductor) thermopile IR detectors and thermal converters","authors":"D. Randjelović, Z. Djuric, R. Petrovic, Ž. Lazić, T. Dankovic","doi":"10.1109/ICMEL.2000.838761","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838761","url":null,"abstract":"This paper presents the design and fabrication technique of a test structure with p/sup +/Si/metal and p/sup +/Si/sputtered-Si thermopiles intended for optimization of performance of multilayer thermopile IR detectors and thermal converter. An experimental structure is fabricated using micromachining techniques.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117036583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photosensitivity increase of vapor-phase graded band gap CdHgTe by introduction to substrate of an isovalent impurity Mn,Zn 引入同价杂质Mn,Zn，提高气相梯度带隙CdHgTe的光敏性
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840577
O. I. Vlasenko, V.M. Babentsov, Z.K. Vlasenko, I. Kurilo, I.O. Rudyi
{"title":"Photosensitivity increase of vapor-phase graded band gap CdHgTe by introduction to substrate of an isovalent impurity Mn,Zn","authors":"O. I. Vlasenko, V.M. Babentsov, Z.K. Vlasenko, I. Kurilo, I.O. Rudyi","doi":"10.1109/ICMEL.2000.840577","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840577","url":null,"abstract":"By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. The increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses due to the introduction of an isovalent component (Mn, Zn) of smaller size and due to reduction of recombination activity of non-equilibrium charge carriers in the film. The photo-sensitivity increase in the field of the metallurgical boundary in the CdMnTe-CdMnHgTe structure under increase of the Mn content up to /spl gamma//spl les/0.08 in comparison to the CdZnTe-CdZnHgTe structure is connected with the more precise matching of the lattices of the initial materials. On the basis of comparisons of experimental and calculated profiles of the component distribution, the values of diffusion coefficients in the substrate and growing film were obtained.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129931434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-ohmic contacts to /spl alpha/-SiC produced by laser technology methods 用激光技术方法生产/spl α /-SiC低欧姆触点
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838735
L. Fedorenko, V. Kiselov, S. Svechnikov, P. Saltykov, M. Yusupov
{"title":"Low-ohmic contacts to /spl alpha/-SiC produced by laser technology methods","authors":"L. Fedorenko, V. Kiselov, S. Svechnikov, P. Saltykov, M. Yusupov","doi":"10.1109/ICMEL.2000.838735","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838735","url":null,"abstract":"Developed in this paper are the method and technological scheme of forming of multilayer structures W/Si/sub 3/N/sub 4//W/N to obtain ohmic contacts to /spl alpha/-SiC (N), by pulsed laser deposition (PLD) and laser annealing (LA). The optimal regimes for laser irradiation (PLI) were determined. When using Nd/sup 3+/:YAG laser, laser annealing threshold levels of ohmic contacts based on SiC/W/Si/sub 3/N/sub 4//W structures were determined. It is shown that the Q-switched regime with combined exposure of the fundamental (/spl lambda/=1.06 /spl mu/m) and double (/spl lambda/=0.53 /spl mu/m) harmonics is found to be optimal for obtaining minimal contact resistance when a YAG laser is used. It is shown that the threshold levels range of visual observed irreversible changes of resistivity with simultaneous voltage-current characteristic changes is found in area P/sub th/=10/sup 7/-2.8/spl middot/10/sup 9/ W/cm/sup 2/ in dependence from regimes of laser radiation and thickness of initial structures. Typical values of resistivity /spl rho//sub 0/ of elsewhere obtained ohmic contacts to /spl alpha/-SiC based on tungsten were close to the value /spl rho//sub 11//spl sim/5-6/spl times/10/sup -4/ /spl Omega//spl middot/cm/sup 2/.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117228996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-power CMOS RC oscillators based on current conveyors 基于电流传送带的低功耗CMOS RC振荡器
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838784
J. Popovic, B. Nikolić, K. Current, A. Pavasovic, D. Vasiljevic
{"title":"Low-power CMOS RC oscillators based on current conveyors","authors":"J. Popovic, B. Nikolić, K. Current, A. Pavasovic, D. Vasiljevic","doi":"10.1109/ICMEL.2000.838784","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838784","url":null,"abstract":"Experimental results for new low-power, reliable start-up CMOS RC oscillators are presented. The oscillators use a modified Fabre-Normand translinear current conveyor. Measurements show reliable oscillation start-up for power supply voltages that range from 1.5 V to 5 V with current consumption from 100 nA to 1.2 mA, respectively. Oscillation frequencies up to 55 MHz have been observed in circuits fabricated in a modest 2 /spl mu/m CMOS technology.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129180471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stress induced degradation in RF deposited Ta/sub 2/O/sub 5/ films on silicon 应力诱导降解RF在硅上沉积Ta/sub 2/O/sub 5/薄膜
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840593
N. Novkovski, M. Pecovska-Gjorgjevich, E. Atanassova, T. Dimitrova
{"title":"Stress induced degradation in RF deposited Ta/sub 2/O/sub 5/ films on silicon","authors":"N. Novkovski, M. Pecovska-Gjorgjevich, E. Atanassova, T. Dimitrova","doi":"10.1109/ICMEL.2000.840593","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840593","url":null,"abstract":"For MOS capacitors with Ta/sub 2/O/sub 5/ gate insulator, the voltage needed to maintain constant injection current is found to decrease gradually in an initial stage longer then the usual positive charge-trapping phase. The above observation can be explained by the gradual destruction of an intermediate layer of SiO/sub 2/ between the Ta/sub 2/O/sub 5/ film and the substrate. Annealing in oxygen makes this voltage decrease more pronounced, must probably because of the additional growth of the oxide layer during anneal.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123052261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal simulation of high-lead count packages 高导联数封装的热模拟
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840587
G. Hanreich, L. Musiejovsky, J. Nicolics, K. Riedling
{"title":"Thermal simulation of high-lead count packages","authors":"G. Hanreich, L. Musiejovsky, J. Nicolics, K. Riedling","doi":"10.1109/ICMEL.2000.840587","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840587","url":null,"abstract":"An efficient thermal management in electronic components is essential to minimize the influence of thermomechanically induced stress and thermal load. To reduce the effort caused by measuring the thermal behavior of semiconductor components frequently thermal simulation is applied. However, using commercially available software packages high effort is necessary for maintenance and for generating the thermal models. In addition the limitation of the node number does not allow spatial discretization sufficiently fine for high lead count packages. In this paper a new thermal simulation tool is presented which allows to establish models in a very efficient way. The developed and implemented solver based on the alternating direction implicit method (ADI-method) is efficiently processing the required high node number. Moreover, in this paper the developed thermal simulation tool is applied for the thermal characterization of a 176 lead QFP-Package using a discretization with 320.000 nodes. Steady-state and transient thermal qualities of the package are investigated.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132324499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self-organized growth of Si/Si and Ge/sub x/Si/sub 1-x//Si superlattices Si/Si和Ge/sub -x/ Si/sub - 1-x/ Si超晶格的自组织生长
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840564
A. Klimovskaya, I. Ostrovskii, E. Gule, I. Prokopenko
{"title":"Self-organized growth of Si/Si and Ge/sub x/Si/sub 1-x//Si superlattices","authors":"A. Klimovskaya, I. Ostrovskii, E. Gule, I. Prokopenko","doi":"10.1109/ICMEL.2000.840564","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840564","url":null,"abstract":"Si/Si and Ge/sub x/Si/sub 1-x//Si superlattices were grown by vapour-transport reactions. Au and Pt were used to initiate self-organized growth of different \"brushes\". A low of distribution and shape of growth peculiarities has been studied by electron microscopy.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131091160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stimulated approach to SOI structure formation by low dose implantation 低剂量注入诱导SOI结构形成
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838737
V. Litovchenko, A. Efremov
{"title":"Stimulated approach to SOI structure formation by low dose implantation","authors":"V. Litovchenko, A. Efremov","doi":"10.1109/ICMEL.2000.838737","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838737","url":null,"abstract":"Physical mechanisms of oxygen transport and precipitation in silicon during the synthesis of a buried oxide layer are reviewed. Different effects caused by interaction of weakly bonded oxygen with mobile point defects and static defect complexes are analyzed. As a result, the possibilities to control the evolution of the spatial distribution of implanted oxygen by means of gettering and defect engineering are proposed and validated by computer simulations based on a kinetic quasi-chemical description. Special attention is given to carbon induced gettering mechanisms involved in buried oxide synthesis known as Low-Dose Approach Combined with Defect Engineering (LDACODE). SIMS profiling data together with the results of computer simulations show a rather complicated autocatalytic behavior of carbon and an important role of the carbon-vacancy and carbon-oxygen complexes in oxygen accumulation. Some effects in the early stage kinetics of oxygen redistribution are revealed and discussed.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132160392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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