发布求助
文献互助 智能选刊 最新文献

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

筛选
英文 中文
Optical constants of Hg/sub x/Cd/sub 1-x/Te alloys Hg/sub -x/ Cd/sub - 1-x/Te合金的光学常数
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840565
A. Djurišić, A. Rakić, R. Tmušić, E. Li, M. Majewski
{"title":"Optical constants of Hg/sub x/Cd/sub 1-x/Te alloys","authors":"A. Djurišić, A. Rakić, R. Tmušić, E. Li, M. Majewski","doi":"10.1109/ICMEL.2000.840565","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840565","url":null,"abstract":"Optical constants of Hg/sub x/Cd/sub 1-x/Te alloys are modeled for the first time over the spectral range from 1.5 eV to 6.0 eV for all compositions 0/spl les/x/spl les/1. The employed model is the modified Adachi's model, which utilizes variable line broadening instead of the conventional Lorentzian one. The model takes into account transitions at critical points E/sub 0/, E/sub 0/+/spl Delta//sub 0/, E/sub 1/, E/sub 1/+/spl Delta//sub 1/, E/sub 0/', E/sub 2/(X), and E/sub 2/(/spl Sigma/), as well as excitonic effects at the lowest four critical points. Model parameters are determined using a global optimization routine, namely an acceptance-probability-controlled simulated annealing algorithm. Excellent agreement with the experimental data is obtained in the entire investigated energy and composition ranges.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115600972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature monitoring of electronic circuits based on analytical thermal model 基于解析热模型的电子电路温度监测
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838758
M. Janicki, A. Napieralski
{"title":"Temperature monitoring of electronic circuits based on analytical thermal model","authors":"M. Janicki, A. Napieralski","doi":"10.1109/ICMEL.2000.838758","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838758","url":null,"abstract":"This paper presents a method of integrated circuit temperature monitoring based on an analytical thermal model. First, a thermal model of a real power integrated circuit is created. Then, power dissipated in transistors is estimated from noisy temperature sensor measurements. The quality of estimate is enhanced owing to the use of the QR-RLS adaptive algorithm.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126180023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Rise-time effects in ggnMOSt under TLP stress TLP胁迫下ggest的上升时间效应
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840588
G. Boselli, A. Mouthaan, F. Kuper
{"title":"Rise-time effects in ggnMOSt under TLP stress","authors":"G. Boselli, A. Mouthaan, F. Kuper","doi":"10.1109/ICMEL.2000.840588","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840588","url":null,"abstract":"In this paper the main mechanisms that lead the turn on of the parasitic bipolar transistor of a grounded gate nMOS transistor (ggnMOS) under TLP stress have been analyzed in detail in the sub-nanoseconds range by means of a mixed-mode simulator. We showed that the breakdown voltage of the ggnMOS measured in static conditions would underestimate the maximum voltage across the protection structure obtained by TLP stress, depending on the rise-time of the applied pulse.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130867287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Effect of /spl gamma/-irradiation on the electrophysical parameters of metal/GaAs barrier structures with textured interfaces /spl γ辐照对具有织构界面的金属/砷化镓势垒结构电物理参数的影响
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840591
O. Borkovskaya, N. Dmitruk, R. Konakova, S. Mamykin, V.V. Milenin, E. Soloviev, M. Tagaev, D.I. Voitsikhovskiy
{"title":"Effect of /spl gamma/-irradiation on the electrophysical parameters of metal/GaAs barrier structures with textured interfaces","authors":"O. Borkovskaya, N. Dmitruk, R. Konakova, S. Mamykin, V.V. Milenin, E. Soloviev, M. Tagaev, D.I. Voitsikhovskiy","doi":"10.1109/ICMEL.2000.840591","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840591","url":null,"abstract":"We investigated (i) morphology of the GaAs surface with a quasigrating-type microrelief and (ii) current flow mechanism in the Au/GaAs barrier structures formed on the above textured surface. Both Atomic Force Microscopy (AFM) and measurements of electrical (I-V and C-V) characteristics were used. We have found both semiconductor and interface parameters, as well as studied how they depend on /sup 60/Co /spl gamma/-irradiation in the 10/sup 3//spl divide/10/sup 7/ Gy dose range. The parameters measured were shown to be tolerant to such irradiation doses.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132463639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peculiarities of Si films etching in CF/sub 4/ parent gas 硅薄膜在CF/sub - 4/母气中蚀刻的特性
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840576
Y. Grigoryev, A. Gorobchuk
{"title":"Peculiarities of Si films etching in CF/sub 4/ parent gas","authors":"Y. Grigoryev, A. Gorobchuk","doi":"10.1109/ICMEL.2000.840576","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840576","url":null,"abstract":"The peculiarities of heat-mass transfer in a radial flow reactor are discussed. Flow structure, temperature of gas mixture and reactive species concentration distribution were studied as a functions of gas flow rate and wafer temperature. The simulations of the reactor incorporated the modeling of the hydrodynamical and molecular transport processes in the etching chamber. The authors considered two-, three- and four-component chemical kinetics. The electron density distribution corresponded to a \"diffusion-dominated\" discharge. In ther analysis of the calculation data, it was shown that the significant radial gradients of gas temperature appeared and reduced the etching uniformity of the wafer. The distribution of reactive species concentration and etching rate depends on the choice of chemical kinetic model. To choose the kinetic model of the plasma reactor it is necessary to carry out a comparison of calculation data with experimental results.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130952719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Transmission line modelling by ladder networks 用梯形网络建立传输线模型
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838800
G. Ferri
{"title":"Transmission line modelling by ladder networks","authors":"G. Ferri","doi":"10.1109/ICMEL.2000.838800","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838800","url":null,"abstract":"The modelling of a transmission line has been considered by the use of passive networks. From the electrical point of view, a ladder network (a repetition of infinite elementary cells of equal type) is proved to be a first-order approximation of the line. Two different approaches have been followed: the first one utilizes the determined voltages in the network, the second one the recursive equations of the line. Among the ladder networks, the \"half-T\" type, one of the most commonly used, is proved to be a good model for the line simulation only in the case of loading impedance equal to the \"characteristic\" one.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131598750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MOS structure threshold voltage model by rigorously considering quantum mechanical effect 严格考虑量子力学效应的MOS结构阈值电压模型
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840561
Yutao Ma, Zhijian Li, Litian Liu, Z. Yu
{"title":"MOS structure threshold voltage model by rigorously considering quantum mechanical effect","authors":"Yutao Ma, Zhijian Li, Litian Liu, Z. Yu","doi":"10.1109/ICMEL.2000.840561","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840561","url":null,"abstract":"Quantum Mechanical Effects (QME) on deep-submicron MOSFET characteristics are analyzed from first-principle theory. The single subband occupation approximation often used in earlier works is proved to be invalid, based on rigorous consideration of subband structure and carrier distribution. The concepts of surface layer quantum effective density of states (SQEDOS) and the surface layer classical effective density of states (SCEDOS) are proposed through which a Vth shift model due to QME is derived. The model reveals the physical nature of the influence of QME on the Vth shift and gives consistent results with experiments.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129256306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Diagnostics of large-area solar cells by local irradiation 大面积太阳能电池局部照射诊断
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840556
J. Radil, V. Benda
{"title":"Diagnostics of large-area solar cells by local irradiation","authors":"J. Radil, V. Benda","doi":"10.1109/ICMEL.2000.840556","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840556","url":null,"abstract":"This paper presents a method for determining of local defects, which bring down efficiency and reliability of solar cells, using local irradiation of the surface of large-area solar cells. The method can give information about position and extent of local defects. Photovoltaic voltage generated by local irradiation is decreased in the area of local defects and so local defects can be determined.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131094769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A MATLAB toolbox for analysis of continuous-time filters 一个分析连续时间滤波器的MATLAB工具箱
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838797
M. Lutovac, D. Tosic, B. Evans
{"title":"A MATLAB toolbox for analysis of continuous-time filters","authors":"M. Lutovac, D. Tosic, B. Evans","doi":"10.1109/ICMEL.2000.838797","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838797","url":null,"abstract":"We present an original framework for advanced continuous-time filter design. Within this framework we have written MATLAB toolboxes for drawing filter circuit schematics, computation and visualization of the filter design parameters and the design space, and continuous-time filter design and analysis. The toolboxes are easy to use, mouse driven, and user friendly to an unexperienced filter designer or practicing engineer.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115750187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ohmic contacts for microwave diodes 微波二极管用欧姆触点
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838736
R. Konakova, V. V. Milenin, D. I. Voitsikhovskiy, E. Soloviev, M. Tagaev, G. Beketov, G. N. Kashin, N. S. Boltovets, N. Goncharuk, V. E. Chaika, V. A. Krivutsa
{"title":"Ohmic contacts for microwave diodes","authors":"R. Konakova, V. V. Milenin, D. I. Voitsikhovskiy, E. Soloviev, M. Tagaev, G. Beketov, G. N. Kashin, N. S. Boltovets, N. Goncharuk, V. E. Chaika, V. A. Krivutsa","doi":"10.1109/ICMEL.2000.838736","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838736","url":null,"abstract":"Au-TiN-n/sup +/-Si and Au-Ti-Pd/sub 2/Si-n/sup +/-Si ohmic contacts were fabricated using thermal and magnetron evaporation onto n/sup +/-silicon substrates with various concentrations of free electrons. Diode test structures with such contacts were fabricated using photolithography. The effect of thermal annealing and /sup 60/Co /spl gamma/-irradiation on the I-V curves and stability of both contacts and test structures was investigated. The data obtained were compared to the results of mathematical simulation of both tight contacts and those with a SiO/sub 2/ interlayer. The calculations and experiments demonstrated that such tight low-resistance contacts with Schottky barrier based on palladium silicides are tolerant to short-term thermal annealing up to 600/spl deg/C and to /spl gamma/-irradiation in the 10/sup 2/ to 3/spl times/10/sup 5/ Gy total dose range.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124312442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信