短几何LDD和短沟道FOLD mosfet的电特性分析模型

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840558

A. Kumar, E. Kalra, S. Haldar, R. Gupta

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引用次数: 0

摘要

建立了短几何形状LDD MOSFET和短沟道FOLD MOSFET的电特性分析模型。所得结果与实验数据吻合良好，表明该模型在亚微米范围内是有效的。

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An analytical model for electrical characteristics of short geometry LDD and short channel FOLD MOSFETs

An analytical model for electrical characteristics of short geometry LDD MOSFET and short channel FOLD MOSFET is developed. The results so obtained are in good agreement with the experimental data showing the validity of the model in the submicrometer range.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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