n型4H-SiC上NO氮化栅氧化物的Fowler-Nordheim注入分析

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840582

Hui-feng Li, S. Dimitrijev, D. Sweatman, H. B. Harrison

{"title":"n型4H-SiC上NO氮化栅氧化物的Fowler-Nordheim注入分析","authors":"Hui-feng Li, S. Dimitrijev, D. Sweatman, H. B. Harrison","doi":"10.1109/ICMEL.2000.840582","DOIUrl":null,"url":null,"abstract":"F-N injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300/spl deg/C. The results show that NO nitridation has a positive effect on the Fowler-Nordheim electron injection at high electric fields. The electron injection barrier height is very close to the theoretical value at room temperature. The temperature dependence of the electron injection barrier height is reduced by nitridation.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC\",\"authors\":\"Hui-feng Li, S. Dimitrijev, D. Sweatman, H. B. Harrison\",\"doi\":\"10.1109/ICMEL.2000.840582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"F-N injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300/spl deg/C. The results show that NO nitridation has a positive effect on the Fowler-Nordheim electron injection at high electric fields. The electron injection barrier height is very close to the theoretical value at room temperature. The temperature dependence of the electron injection barrier height is reduced by nitridation.\",\"PeriodicalId\":215956,\"journal\":{\"name\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2000.840582\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2000.840582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

在室温和300/spl℃条件下，研究了在n型4H-SiC上生长的NO氮化栅氧化物中注入F-N的过程。结果表明，NO氮化对高电场下的Fowler-Nordheim电子注入有积极的影响。在室温下，电子注入势垒高度非常接近理论值。氮化降低了电子注入势垒高度对温度的依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC

F-N injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300/spl deg/C. The results show that NO nitridation has a positive effect on the Fowler-Nordheim electron injection at high electric fields. The electron injection barrier height is very close to the theoretical value at room temperature. The temperature dependence of the electron injection barrier height is reduced by nitridation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

自引率

0.00%

发文量