应力诱导降解RF在硅上沉积Ta/sub 2/O/sub 5/薄膜

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840593

N. Novkovski, M. Pecovska-Gjorgjevich, E. Atanassova, T. Dimitrova

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引用次数: 0

摘要

对于具有Ta/sub 2/O/sub 5/栅极绝缘体的MOS电容器，发现维持恒定注入电流所需的电压在初始阶段逐渐降低的时间比通常的正电荷捕获阶段更长。上述观察结果可以用Ta/sub 2/O/sub 5/薄膜与衬底之间SiO/sub 2/中间层的逐渐破坏来解释。在氧气中退火使这种电压下降更加明显，这可能是因为在退火过程中氧化层的额外生长。

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Stress induced degradation in RF deposited Ta/sub 2/O/sub 5/ films on silicon

For MOS capacitors with Ta/sub 2/O/sub 5/ gate insulator, the voltage needed to maintain constant injection current is found to decrease gradually in an initial stage longer then the usual positive charge-trapping phase. The above observation can be explained by the gradual destruction of an intermediate layer of SiO/sub 2/ between the Ta/sub 2/O/sub 5/ film and the substrate. Annealing in oxygen makes this voltage decrease more pronounced, must probably because of the additional growth of the oxide layer during anneal.

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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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