Self-organized growth of Si/Si and Ge/sub x/Si/sub 1-x//Si superlattices

A. Klimovskaya, I. Ostrovskii, E. Gule, I. Prokopenko
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Abstract

Si/Si and Ge/sub x/Si/sub 1-x//Si superlattices were grown by vapour-transport reactions. Au and Pt were used to initiate self-organized growth of different "brushes". A low of distribution and shape of growth peculiarities has been studied by electron microscopy.
Si/Si和Ge/sub -x/ Si/sub - 1-x/ Si超晶格的自组织生长
通过气相输运反应生长出Si/Si和Ge/sub -x/ Si/sub -x/ Si超晶格。Au和Pt被用来启动不同“刷子”的自组织生长。用电子显微镜研究了生长特性的分布和形状。
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