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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

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Atomic force microscopy investigation of dislocation structures and deformation characteristics in neutron irradiated silicon detectors 中子辐照硅探测器中位错结构和变形特性的原子力显微镜研究
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.840590
G. Golan, E. Rabinovich, A. Inberg, A. Axelevitch, M. Oksman, Y. Rosenwaks, A. Kozlovsky, P.J. Rancoita, M. Rattagi, A. Seidman, N. Croitoru
{"title":"Atomic force microscopy investigation of dislocation structures and deformation characteristics in neutron irradiated silicon detectors","authors":"G. Golan, E. Rabinovich, A. Inberg, A. Axelevitch, M. Oksman, Y. Rosenwaks, A. Kozlovsky, P.J. Rancoita, M. Rattagi, A. Seidman, N. Croitoru","doi":"10.1109/ICMEL.2000.840590","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840590","url":null,"abstract":"The structure, microhardness and deformation character for silicon detectors were investigated following a neutron irradiation, using optical and Atomic Force (AFM) microscopes. The results of these investigations have given an important contribution to the understanding of silicon damage process by neutron irradiation. It was shown that in the interval of neutron fluences 9.9/spl times/10/sup 10//spl les//spl Phi//spl les/3.12/spl times/10/sup 15/ n/cm/sup 2/ the damage is accumulative (from small punctual to large defects). The abrupt changes of microstructure together with the electrical and mechanical properties were found for /spl Phi//spl ges/10/sup 14/ n/cm/sup 2/. Different kinds of defects (dislocations and interstitials) and their complexes appeared under neutron irradiation. For all fluences the regions (\"White\" -\"W\") with a microhardness smaller than in nonirradiated silicon were observed. Microhardness is larger in the regions where the concentration of dislocation loops is high. The \"W\", regions have a small number of the dislocations loops, and single punctual defects were seen there using Atomic Force Microscope. The dislocation loops are placed in specific (\"Black\"-\"B\") regions, which increase in size with the increase of neutron fluence due to a process of vacancies and interstitials accumulation.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133830354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The influence of strong electric field on the interface in the Al-SiO/sub 2/-n-Si Auger transistor 强电场对Al-SiO/ sub2 /-n-Si俄歇晶体管界面的影响
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-12-01 DOI: 10.1109/ICMEL.2000.840544
S. I. Baranchuk, V. Kalganov, N. V. Mileshkina, E. V. Ostroumova, A. Rogachev
{"title":"The influence of strong electric field on the interface in the Al-SiO/sub 2/-n-Si Auger transistor","authors":"S. I. Baranchuk, V. Kalganov, N. V. Mileshkina, E. V. Ostroumova, A. Rogachev","doi":"10.1109/ICMEL.2000.840544","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840544","url":null,"abstract":"The influence of strong electric field on an electron emission from semiconductor surfaces was investigated. We have measured a tunnel electron emission from the metal to the semiconductor in metal-insulator-semiconductor heterostructures with a tunnel transparent insulator layer. A tunnel electron emission from semiconductor tips to vacuum was also investigated. The using of the semiconductor tip field emitters gives a possibility to investigate the semiconductor surface at a especially strong electric field. On the other hand, the investigation of metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes it possible to create the Auger transistor based on the Al-SiO/sub 2/-n-Si heterojunctions, which is one of the fastest operating semiconductor bipolar transistors. The estimations show that metal-insulator-semiconductor Auger transistor based on solid solution Ga-In-As-Sb with varying composition makes it possible to increase the highest operation frequency of Auger transistors up to 5 times compared with the silicon based Auger transistor and really approaches the highest frequency to be more then 10/sup -12/ sec/sup -1/.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129128086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Advanced concepts in smart power integrated circuits 智能电源集成电路的先进概念
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840537
P. Rossel, N. Cezac, G. Charitat, J. Dorkel, F. Morancho, I. Pagès, H. Tranduc, M. Zitouni
{"title":"Advanced concepts in smart power integrated circuits","authors":"P. Rossel, N. Cezac, G. Charitat, J. Dorkel, F. Morancho, I. Pagès, H. Tranduc, M. Zitouni","doi":"10.1109/ICMEL.2000.840537","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840537","url":null,"abstract":"Industrial Power ICs (Smart Power) are mainly intended for the automotive industry. Usually, they are manufactured using the junction-based isolation technological process. This paper deals with the main elements associated with the future development of this type of circuit. Among the basic issues dealt with are: industrial development, decrease in chip size using submicronic technologies, energy capability and some problems related to electrical isolation.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115321036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Extraction of the bulk-charge effect parameter in MOSFETs mosfet体积电荷效应参数的提取
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840539
F. Garcia Sanchez, A. Ortiz-Conde, J. Salcedo, J. Liou, Y. Yue
{"title":"Extraction of the bulk-charge effect parameter in MOSFETs","authors":"F. Garcia Sanchez, A. Ortiz-Conde, J. Salcedo, J. Liou, Y. Yue","doi":"10.1109/ICMEL.2000.840539","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840539","url":null,"abstract":"A method is presented to extract the bulk charge effect parameter in MOSFET. The method requires measuring the drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested with Id-Vgs characteristics modeled with SPICE and with a a 2-D device simulator. It was also applied to experimental Id-Vgs characteristics.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122658001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Technologies and design of low-power RF microsystems 低功耗射频微系统技术与设计
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840536
E. McShane, K. Shenai
{"title":"Technologies and design of low-power RF microsystems","authors":"E. McShane, K. Shenai","doi":"10.1109/ICMEL.2000.840536","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840536","url":null,"abstract":"Portable RF communications devices are a fast-growing market segment. Typically battery operated, these devices demand technologies that support low-voltage, low-power operation. Considering that system dimensions are continually shrinking, an RF technology must also be amenable to integration with logic or mixed-signal circuitry leading to complex RF microsystems. In this paper, the technologies and design of RF microsystems are described with respect to the primary competitors: Si CMOS, Si BJT, SiGe HBT, and GaAs MESFET, HEMT, and HBT. The evaluations clearly identify the direction of RF microsystems development into the next millennium. A case study is also presented of an RF microsystem comprised of a processor core and a wireless RF transceiver.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122966562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Transient response of HgCdTe Auger-suppressed magnetoconcentration photoconductors HgCdTe俄歇抑制磁浓度光导体的瞬态响应
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838762
Z. Jakšić, Z. Djuric, N. Dalarsson
{"title":"Transient response of HgCdTe Auger-suppressed magnetoconcentration photoconductors","authors":"Z. Jakšić, Z. Djuric, N. Dalarsson","doi":"10.1109/ICMEL.2000.838762","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838762","url":null,"abstract":"In this work we analyze the transient response of a HgCdTe magnetoconcentration photoconductor. We utilized the set of general equations for modeling of semiconductor devices in crossed electric and magnetic fields for the case of large carrier nonequilibrium. The device was illuminated by Heaviside-type infrared radiation with an intensity low enough to cause only small departures from the stationary state. We obtained a single parabolic differential equation for minority carrier concentration distribution in the one-dimensional case. Shockley-Read-Hall-limited boundary conditions were defined for the current densities on the defector front and the back side. Larger quenching of the carrier concentration within the photodetector active area improves the generation-recombination signal-to-noise ratio and simultaneously shortens the response time. However, stronger fields intensify the effects of carrier heating. There is an optimum balance between the field intensities and the beneficial effects of Auger suppression and for this the maximum specific detectivity-bandwidth product is obtained.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"125 47","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114046859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0.2 /spl mu/m nMOSFET using EB exposure for all lithography processes 0.2 /spl mu/m nMOSFET采用EB曝光所有光刻工艺
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838727
I. Fujiwara, H. Sakuraba, M. Umetani, Kazunori Kataoka, A. Tanabe, Tetsuo Endoh, F. Masuoka
{"title":"0.2 /spl mu/m nMOSFET using EB exposure for all lithography processes","authors":"I. Fujiwara, H. Sakuraba, M. Umetani, Kazunori Kataoka, A. Tanabe, Tetsuo Endoh, F. Masuoka","doi":"10.1109/ICMEL.2000.838727","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838727","url":null,"abstract":"nMOSFETs and an nMOS ring oscillator have been fabricated using EB exposure for all lithography processes. The gate oxide thickness was 10 nm. Good saturation characteristics were obtained for the nMOSFET with a 0.23 /spl mu/m gate length. A drain current of the MOSFET was 0.52 mA//spl mu/m at a supply voltage of 3 V and the threshold voltage was about 0.3 V. 52 ps delay time was obtained from an nMOS ring oscillator with a 0.21 /spl mu/m gate length at a supply voltage of 3 V.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128495939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A SPICE modeling of the negative resistance breakdown region for the bipolar junction transistor 双极结晶体管负电阻击穿区域的SPICE模型
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840555
D. Dobrescu, L. Dobrescu, A. Rusu
{"title":"A SPICE modeling of the negative resistance breakdown region for the bipolar junction transistor","authors":"D. Dobrescu, L. Dobrescu, A. Rusu","doi":"10.1109/ICMEL.2000.840555","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840555","url":null,"abstract":"This paper presents and studies new developed SPICE models for the breakdown region of the junction transistor biased in the common-emitter configuration. In such case, the output electrical characteristic has a negative slope, especially for very small or negative base currents.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127013990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electron spectra in simple superlattices 简单超晶格中的电子能谱
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840549
S. Stojkovic, J. Šetrajčić, I. Junger, I. Vragović, S. Lazarev
{"title":"Electron spectra in simple superlattices","authors":"S. Stojkovic, J. Šetrajčić, I. Junger, I. Vragović, S. Lazarev","doi":"10.1109/ICMEL.2000.840549","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840549","url":null,"abstract":"Analysing electronic structure of crystal superlattices by the two-time retarded Green's functions method, we got electron dispersion law. Besides continual energy zones of allowed electron states (as in the bulk), there appear forbidden energy zones as well as characteristic bottom and top energy gaps. By suitable choice of energy parameter of electron transfer between superlayers, one obtains that allowed energy zones spread outside the bulk energy limits. There arise the localized electron states. For some values of superlayers widths, energy minibands join in the center or at the end of first Brillouin zone.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"124 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114011725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New challenges to the modelling and electrical characterisation of ohmic contacts for ULSI devices 超大规模集成电路设备欧姆触点建模和电气特性分析面临的新挑战
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838732
A. Holland, G. Reeves
{"title":"New challenges to the modelling and electrical characterisation of ohmic contacts for ULSI devices","authors":"A. Holland, G. Reeves","doi":"10.1109/ICMEL.2000.838732","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838732","url":null,"abstract":"Continuing developments in semiconductor process and materials technology have enabled significant reductions to be achieved in the contact resistance Rc of devices. This reduction is commonly assessed in terms of the specific contact resistance (scr) parameter /spl rho//sub c/ (/spl Omega//spl middot/cm/sup 2/). Such a reduction is essential, for as device dimensions decrease, then so also must /spl rho//sub c/ in order not to compromise down-scaled ULSI device performance. Thus the ability to accurately model contacts and measure /spl rho//sub c/ is essential to ohmic contact development. In this paper the increased difficulty in measuring lower /spl rho//sub c/ values, due to trends in technology, is discussed. The challenges presented by the presence of two interfaces in silicided contacts (metal-silicide-silicon) is also discussed. Experimental values of the scr of an aluminium-titanium silicide interface is determined using multiple cross Kelvin resistor test structures.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126440389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
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