发布求助
文献互助 智能选刊 最新文献

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)最新文献

筛选
英文 中文
Parameter extraction using lateral and vertical optimization 参数提取采用横向和纵向优化
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840546
A. Ortiz-Conde, Y. Ma, J. Thomson, E. Santos, J. J. Liou, F. Sánchez, M. Lei, J. Finol, P. Layman
{"title":"Parameter extraction using lateral and vertical optimization","authors":"A. Ortiz-Conde, Y. Ma, J. Thomson, E. Santos, J. J. Liou, F. Sánchez, M. Lei, J. Finol, P. Layman","doi":"10.1109/ICMEL.2000.840546","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840546","url":null,"abstract":"We revisited the direct lateral optimization method, which is based on the approach of minimizing the error on the lateral axis. We compare the efficiency and robustness of the widely used vertical optimization and the present lateral optimization methods.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128117519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A new generation of power devices based on the concept of the "Floating Islands" 基于“浮动岛屿”概念的新一代动力装置
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838771
N. Cezac, P. Rossel, F. Morancho, H. Tranduc, A. Peyre-Lavigne, I. Pagès
{"title":"A new generation of power devices based on the concept of the \"Floating Islands\"","authors":"N. Cezac, P. Rossel, F. Morancho, H. Tranduc, A. Peyre-Lavigne, I. Pagès","doi":"10.1109/ICMEL.2000.838771","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838771","url":null,"abstract":"In this paper, a new concept called \"Floating Islands Diode\" (FLI-Diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This new concept can be applied to any power devices (lateral or vertical): for instance, the specific on-resistance of a 900 Volts Vertical DMOS Transistor is strongly improved (reduction of 70% when compared to the conventional structure).","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130054448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
New MESFET noise models as user-defined elements of program Libra library 新的MESFET噪声模型作为程序Libra库的用户定义元素
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840540
N. Males-Ilic, V. Markovic, B. Milovanovic
{"title":"New MESFET noise models as user-defined elements of program Libra library","authors":"N. Males-Ilic, V. Markovic, B. Milovanovic","doi":"10.1109/ICMEL.2000.840540","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840540","url":null,"abstract":"In this paper we present a procedure for defining two new MESFET noise models as user-defined elements of standard microwave circuit simulator Libra. The first implemented model is based on equivalent temperatures including complete correlation between intrinsic transistor noise sources, while the second model extends the first one by involving the gate-leakage current influence to transistor noise characteristics.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134268200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Industrial demands on micromechanical products 微机械产品的工业需求
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840531
H. Detter, G. Popovic
{"title":"Industrial demands on micromechanical products","authors":"H. Detter, G. Popovic","doi":"10.1109/ICMEL.2000.840531","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840531","url":null,"abstract":"According to the development of microsystems, a completely new perspective can be observed for those fields of application where smallest dimensions, often smaller than the dot of an \"i\", are required. Micro system technology (MST), including micro-mechanical components, have to he applied in all fields where highest \"power density\", minimum weight and highest reliability are needed. The new approach into the micro-world could he a challenge in medical technology, telecommunications, agriculture, automotive industry, consumer products etc. A plenitude of measuring and controlling tasks do exist in almost all domains. The research and development in the promising field of microsystems is oriented towards the applications enabling a better quality of life, giving new chances for enterprises and opening new market potentials. In this paper some aspects of the actual demands the industry is putting on the MST products are presented.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133060190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High temperature treatment effect on wafers warpage with anodized porous silicon layers 高温处理对多孔硅阳极氧化层晶圆翘曲的影响
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840575
G. Ayvazyan, A. Vardanyan, A.A. Chomoyan, G. A. Makaryan
{"title":"High temperature treatment effect on wafers warpage with anodized porous silicon layers","authors":"G. Ayvazyan, A. Vardanyan, A.A. Chomoyan, G. A. Makaryan","doi":"10.1109/ICMEL.2000.840575","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840575","url":null,"abstract":"The influence of high-temperature treatment from 800 to 1200/spl deg/C in neutral atmosphere on the warpage of wafers with porous silicon (PS) layers has been investigated. We have shown that the warpage has an anisotropic nature and its magnitude depends on the regimes of forming a layer of PS and the subsequent heat treatment. The link between the wafers and the structural changes of the PS is discussed.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124221971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The 1.44F/sup 2/ memory cell technology with the stacked-surrounding gate transistor (S-SGT) DRAM 1.44F/sup 2/存储单元技术与堆叠周围栅极晶体管(S-SGT) DRAM
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838730
T. Endoh, H. Sakuraba, Katsuhisa Shinmei, F. Masuoka
{"title":"The 1.44F/sup 2/ memory cell technology with the stacked-surrounding gate transistor (S-SGT) DRAM","authors":"T. Endoh, H. Sakuraba, Katsuhisa Shinmei, F. Masuoka","doi":"10.1109/ICMEL.2000.838730","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838730","url":null,"abstract":"The proposed Stacked-Surrounding Gate Transistor (S-SGT) DRAM is structured by stacking several SGT-type cells in series vertically. When the S-SGT DRAM is stacking 4 cells and one bit-line of both S-SGT and the normal DRAM has 1 K-bit cells, the S-SGT DRAM can realize a cell area per bit of 1.44F/sup 2/, while cell area per bit of the normal DRAM with the same design rule is 12F/sup 2/. Also the S-SGT DRAM achieves a 230% larger signal capacitance over total bit-line capacitance (Cs/Cb) than that of the normal DRAM.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114797848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New three dimensional (3D) memory array architecture for future ultra high density DRAM 面向未来超高密度DRAM的新型三维(3D)存储器阵列架构
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838729
T. Endoh, H. Sakuraba, Katsuhisa Shinmei, F. Masuoka
{"title":"New three dimensional (3D) memory array architecture for future ultra high density DRAM","authors":"T. Endoh, H. Sakuraba, Katsuhisa Shinmei, F. Masuoka","doi":"10.1109/ICMEL.2000.838729","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838729","url":null,"abstract":"A three dimensional (3D) memory array architecture is realized by stacking several cells in series vertically up on each cell which is located in two dimensional (2D) array matrix. Total bit-line capacitance of this proposed architecture's DRAM is suppressed to 37% of normal DRAM, when one bit-line has 1 K-bit cells and the same design rules are used. Moreover, array area of 1 M-bit DRAM using the proposed architecture, is reduced to 11.5% of normal DRAM using the same design rules.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"603 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117071543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Simulation of high sensitivity and stability surface acoustic wave NO/sub 2/ gas sensor based on amplitude variations as measurand 基于振幅变化测量的高灵敏度、稳定性表面声波NO/sub / gas传感器的仿真
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.838765
K. El-Shennawy, M. S. Orabi, T. E. Taha
{"title":"Simulation of high sensitivity and stability surface acoustic wave NO/sub 2/ gas sensor based on amplitude variations as measurand","authors":"K. El-Shennawy, M. S. Orabi, T. E. Taha","doi":"10.1109/ICMEL.2000.838765","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.838765","url":null,"abstract":"This paper presents the use of Surface Acoustic Wave (SAW) devices as gas sensors utilizing Multi-Strip Coupler (MSC), where the amplitude of the SAW's is the measured quantity, based on conductivity changes of the used sensor film. A theoretical model for SAW-MSC on LiNbO/sub 3/ substrate and using Copper phthalocyanine (CuPc) as a sensor layer for NO/sub 2/ gas sensor is illustrated. A computer simulation program is developed to obtain the variations in the insertion loss (IL) of the device under the adsorption influence of the substance to be detected, and its results are compared with the published experimental results.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129439093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization of power VDMOSFETs by split C-V measurements 功率vdmosfet的分割C-V测量特性
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840584
P. Habaš, S. Mileusnic, T. Zivanov
{"title":"Characterization of power VDMOSFETs by split C-V measurements","authors":"P. Habaš, S. Mileusnic, T. Zivanov","doi":"10.1109/ICMEL.2000.840584","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840584","url":null,"abstract":"Split C-V measurements are evaluated as a characterization method for power VDMOSFETs. The measurement of the gate total capacitance results for VDMOSFETs in a complex curve which is superposition of the electron and hole, accumulation, depletion and inversion contributions of different interface regions. As opposed, in the split C-V measurements, giving gate-drain and gate-source capacitance, the electron and hole contributions of particular interface areas are separated. The structure of the split C-V characteristics and the gate total capacitance of a VDMOS cell is clarified. Interpretation of experimental results is confirmed by numerical 2D calculations of the split C-V characteristics by means of small signal ac analysis, and by numerical quasi-static analysis of the gate-capacitance components which originate from the different interface regions. The impact of the drain-source bias on the characteristics is explained. Applications are envisaged: measurements of technology parameters in VDMOSFETs, and separate measurement of the level of gate oxide degradation in the channel and in the epitaxial region after irradiation.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129821138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Reliability of surface micromachined MicroElectroMechanical actuators 表面微加工微机电执行器的可靠性
2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI: 10.1109/ICMEL.2000.840535
Dandle M. Tanner
{"title":"Reliability of surface micromachined MicroElectroMechanical actuators","authors":"Dandle M. Tanner","doi":"10.1109/ICMEL.2000.840535","DOIUrl":"https://doi.org/10.1109/ICMEL.2000.840535","url":null,"abstract":"This paper will review some of the investigations into MicroElectroMechanical systems (MEMS) reliability. It will categorize the major reliability issues of MEMS actuators. Reliability concerns of stiction, mechanical wear, fracture, fatigue, shock, and vibration will be discussed.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130518449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信