{"title":"新的MESFET噪声模型作为程序Libra库的用户定义元素","authors":"N. Males-Ilic, V. Markovic, B. Milovanovic","doi":"10.1109/ICMEL.2000.840540","DOIUrl":null,"url":null,"abstract":"In this paper we present a procedure for defining two new MESFET noise models as user-defined elements of standard microwave circuit simulator Libra. The first implemented model is based on equivalent temperatures including complete correlation between intrinsic transistor noise sources, while the second model extends the first one by involving the gate-leakage current influence to transistor noise characteristics.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"New MESFET noise models as user-defined elements of program Libra library\",\"authors\":\"N. Males-Ilic, V. Markovic, B. Milovanovic\",\"doi\":\"10.1109/ICMEL.2000.840540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a procedure for defining two new MESFET noise models as user-defined elements of standard microwave circuit simulator Libra. The first implemented model is based on equivalent temperatures including complete correlation between intrinsic transistor noise sources, while the second model extends the first one by involving the gate-leakage current influence to transistor noise characteristics.\",\"PeriodicalId\":215956,\"journal\":{\"name\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2000.840540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2000.840540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New MESFET noise models as user-defined elements of program Libra library
In this paper we present a procedure for defining two new MESFET noise models as user-defined elements of standard microwave circuit simulator Libra. The first implemented model is based on equivalent temperatures including complete correlation between intrinsic transistor noise sources, while the second model extends the first one by involving the gate-leakage current influence to transistor noise characteristics.