高温处理对多孔硅阳极氧化层晶圆翘曲的影响

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840575

G. Ayvazyan, A. Vardanyan, A.A. Chomoyan, G. A. Makaryan

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摘要

研究了在中性气氛下800 ~ 1200℃的高温处理对多孔硅(PS)晶圆翘曲的影响。我们已经表明翘曲具有各向异性性质，其大小取决于形成PS层的制度和随后的热处理。讨论了晶圆与PS结构变化之间的联系。

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High temperature treatment effect on wafers warpage with anodized porous silicon layers

The influence of high-temperature treatment from 800 to 1200/spl deg/C in neutral atmosphere on the warpage of wafers with porous silicon (PS) layers has been investigated. We have shown that the warpage has an anisotropic nature and its magnitude depends on the regimes of forming a layer of PS and the subsequent heat treatment. The link between the wafers and the structural changes of the PS is discussed.

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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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