基于“浮动岛屿”概念的新一代动力装置

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838771

N. Cezac, P. Rossel, F. Morancho, H. Tranduc, A. Peyre-Lavigne, I. Pagès

{"title":"基于“浮动岛屿”概念的新一代动力装置","authors":"N. Cezac, P. Rossel, F. Morancho, H. Tranduc, A. Peyre-Lavigne, I. Pagès","doi":"10.1109/ICMEL.2000.838771","DOIUrl":null,"url":null,"abstract":"In this paper, a new concept called \"Floating Islands Diode\" (FLI-Diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This new concept can be applied to any power devices (lateral or vertical): for instance, the specific on-resistance of a 900 Volts Vertical DMOS Transistor is strongly improved (reduction of 70% when compared to the conventional structure).","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A new generation of power devices based on the concept of the \\\"Floating Islands\\\"\",\"authors\":\"N. Cezac, P. Rossel, F. Morancho, H. Tranduc, A. Peyre-Lavigne, I. Pagès\",\"doi\":\"10.1109/ICMEL.2000.838771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new concept called \\\"Floating Islands Diode\\\" (FLI-Diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This new concept can be applied to any power devices (lateral or vertical): for instance, the specific on-resistance of a 900 Volts Vertical DMOS Transistor is strongly improved (reduction of 70% when compared to the conventional structure).\",\"PeriodicalId\":215956,\"journal\":{\"name\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2000.838771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2000.838771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文提出了一个新的概念“浮岛二极管”(FLI-Diode):这种新型二极管的电压处理能力是由几个PN结串联起来的。这个新概念可以应用于任何功率器件(横向或垂直):例如，900伏垂直DMOS晶体管的特定导通电阻得到了显著改善(与传统结构相比减少了70%)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A new generation of power devices based on the concept of the "Floating Islands"

In this paper, a new concept called "Floating Islands Diode" (FLI-Diode) is proposed: the voltage handling capability of this new diode is assumed by the association of several PN junctions in series. This new concept can be applied to any power devices (lateral or vertical): for instance, the specific on-resistance of a 900 Volts Vertical DMOS Transistor is strongly improved (reduction of 70% when compared to the conventional structure).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

自引率

0.00%

发文量