0.2 /spl mu/m nMOSFET采用EB曝光所有光刻工艺

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838727

I. Fujiwara, H. Sakuraba, M. Umetani, Kazunori Kataoka, A. Tanabe, Tetsuo Endoh, F. Masuoka

{"title":"0.2 /spl mu/m nMOSFET采用EB曝光所有光刻工艺","authors":"I. Fujiwara, H. Sakuraba, M. Umetani, Kazunori Kataoka, A. Tanabe, Tetsuo Endoh, F. Masuoka","doi":"10.1109/ICMEL.2000.838727","DOIUrl":null,"url":null,"abstract":"nMOSFETs and an nMOS ring oscillator have been fabricated using EB exposure for all lithography processes. The gate oxide thickness was 10 nm. Good saturation characteristics were obtained for the nMOSFET with a 0.23 /spl mu/m gate length. A drain current of the MOSFET was 0.52 mA//spl mu/m at a supply voltage of 3 V and the threshold voltage was about 0.3 V. 52 ps delay time was obtained from an nMOS ring oscillator with a 0.21 /spl mu/m gate length at a supply voltage of 3 V.","PeriodicalId":215956,"journal":{"name":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"0.2 /spl mu/m nMOSFET using EB exposure for all lithography processes\",\"authors\":\"I. Fujiwara, H. Sakuraba, M. Umetani, Kazunori Kataoka, A. Tanabe, Tetsuo Endoh, F. Masuoka\",\"doi\":\"10.1109/ICMEL.2000.838727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"nMOSFETs and an nMOS ring oscillator have been fabricated using EB exposure for all lithography processes. The gate oxide thickness was 10 nm. Good saturation characteristics were obtained for the nMOSFET with a 0.23 /spl mu/m gate length. A drain current of the MOSFET was 0.52 mA//spl mu/m at a supply voltage of 3 V and the threshold voltage was about 0.3 V. 52 ps delay time was obtained from an nMOS ring oscillator with a 0.21 /spl mu/m gate length at a supply voltage of 3 V.\",\"PeriodicalId\":215956,\"journal\":{\"name\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMEL.2000.838727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMEL.2000.838727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

nMOS场效应管和一个nMOS环形振荡器已制造使用EB曝光所有光刻工艺。栅氧化层厚度为10 nm。栅极长度为0.23 /spl mu/m的nMOSFET具有良好的饱和特性。在电源电压为3 V时，MOSFET的漏极电流为0.52 mA//spl mu/m，阈值电压约为0.3 V，栅极长度为0.21 /spl mu/m的nMOS环形振荡器在电源电压为3 V时获得了52 ps的延迟时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

0.2 /spl mu/m nMOSFET using EB exposure for all lithography processes

nMOSFETs and an nMOS ring oscillator have been fabricated using EB exposure for all lithography processes. The gate oxide thickness was 10 nm. Good saturation characteristics were obtained for the nMOSFET with a 0.23 /spl mu/m gate length. A drain current of the MOSFET was 0.52 mA//spl mu/m at a supply voltage of 3 V and the threshold voltage was about 0.3 V. 52 ps delay time was obtained from an nMOS ring oscillator with a 0.21 /spl mu/m gate length at a supply voltage of 3 V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

自引率

0.00%

发文量