0.2 /spl mu/m nMOSFET using EB exposure for all lithography processes

Abstract

nMOSFETs and an nMOS ring oscillator have been fabricated using EB exposure for all lithography processes. The gate oxide thickness was 10 nm. Good saturation characteristics were obtained for the nMOSFET with a 0.23 /spl mu/m gate length. A drain current of the MOSFET was 0.52 mA//spl mu/m at a supply voltage of 3 V and the threshold voltage was about 0.3 V. 52 ps delay time was obtained from an nMOS ring oscillator with a 0.21 /spl mu/m gate length at a supply voltage of 3 V.