离子束修饰硅的光声研究

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840566

D. Todorović, P. Nikolić, J. Elazar, M. Smiljanić, A. Bojic̆ić, D. Vasiljević-Radović, K. Radulović

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引用次数: 0

摘要

采用光声频率传输技术研究了离子修饰硅样品的热、弹性和电子输运性质。测量并分析了实验光声数据与调制频率的关系。实验结果表明，离子修饰过程对光声信号有明显的影响。通过对比实验光声信号和理论光声信号，得到了离子修饰半导体的热、弹性和电子输运参数，为离子修饰程度提供了一个指标。

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Investigation of ion-beam modified silicon by photoacoustic method

Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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