真空硅固体微波二极管和三极管基于P/sup ++/-N和钨阴极

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838755

S. Koshevaya, V. Kanevsky, M. Tecpoyoti-T., E. Gutiérrez-D, G.N. Buriak, V. E. Chayka

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引用次数: 0

摘要

本文报道了真空固体微波二极管和三极管的分析。它显示了在毫米和亚毫米范围内使用这些器件作为放大器和发生器的可能性。也可以创建具有大乘法因子和小乘法损失的乘法器。此外，对不同阴极类型的真空固体微波二极管的基本参数进行了分析，结果表明，背电压为P/sup ++/-N的二极管具有较宽的频带，但效率低于钨二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Vacuum-silicon solid microwave diodes and triodes based on P/sup ++/-N and on tungsten cathodes

This work reports the analysis of vacuum-solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small losses of the multiplication. Additionally, the analysis of the basic parameters of these vacuum-solids microwave diodes with different types of cathodes, shows that diodes with a back voltage P/sup ++/-N cathode have a wide frequency band, but an efficiency smaller than that of tungsten diodes.

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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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