SOI器件和电路

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838722

J. Colinge

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引用次数: 12

摘要

介绍了不同类型的绝缘体上硅(SOI)器件，并对其各自的性能进行了比较。SOI技术目前正在成为低压、低功耗电子领域的主流，其中使用的电源电压低至0.5伏。SOI器件和基板可以优化为在千兆赫频率下工作，这使它们成为便携式电信系统的首选技术。讨论了一些先进的SOI器件。

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SOI devices and circuits

Different types of Silicon-on-Insulator (SOI) devices are described and their respective properties are compared. SOI technology is currently becoming mainstream in the field of low-voltage, low-power electronics, where supply voltages as low as 0.5 volt are used. SOI devices and substrates can be optimized to operate at gigahertz frequencies, which makes them a technology of choice for portable telecommunication systems. Some advanced SOI devices are discussed as well.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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