门控二极管击穿电压的解析表达式

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838778

Sang-Bok Yun, Yearn-Ik Choi

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引用次数: 1

摘要

基于掺杂浓度、栅极电压和氧化物厚度，导出了门控二极管击穿电压的解析表达式，并通过二维器件模拟器ATLAS进行了验证。当N/sub / D =1/spl倍/10/sup 15//cm/sup 3/时，栅电压从-70 V变化到130 V时，方程与模拟结果吻合较好，平均误差在5%以内;当掺杂浓度从5/spl倍/10/sup 14//cm/sup 3/变化到2/spl倍/10/sup 15//cm/sup 3/变化时，方程与模拟结果吻合较好，平均误差在10%以内。

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Analytical expression for the breakdown voltage of the gated diodes

Analytical expression for the breakdown voltage of the gated diodes was derived in terms of the doping concentration, gate voltage and oxide thickness, and verified by two-dimensional device simulator, ATLAS. The proposed equation agrees well with simulation results within 5% average error when the gate voltage changes from -70 V to 130 V in case of N/sub D/=1/spl times/10/sup 15//cm/sup 3/ and agrees well with simulation results within 10% average error when the doping concentration changes from 5/spl times/10/sup 14//cm/sup 3/ to 2/spl times/10/sup 15//cm/sup 3/.

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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