A low loss Schottky diodes with a linearly graded doping profile using ion-implantation and out-diffusion from substrate

Abstract

A low loss Schottky rectifier employing a linearly graded doping profile made by new method of epitaxial layer growth is proposed. The linearly graded doping profile is obtained by annealing and out-diffusion from antimony doped substrate after phosphorus ion-implantation. The characteristics of the Schottky diodes employing this method are verified by two dimensional simulation and measurement with SRP (Spreading Resistance Probe). In case of 30 V rated Schottky diodes, the current density of the proposed device is increased about 28% compared with that of the conventional device when forward voltage drop is 0.5 V.