Analytical expression for the breakdown voltage of the gated diodes

Abstract

Analytical expression for the breakdown voltage of the gated diodes was derived in terms of the doping concentration, gate voltage and oxide thickness, and verified by two-dimensional device simulator, ATLAS. The proposed equation agrees well with simulation results within 5% average error when the gate voltage changes from -70 V to 130 V in case of N/sub D/=1/spl times/10/sup 15//cm/sup 3/ and agrees well with simulation results within 10% average error when the doping concentration changes from 5/spl times/10/sup 14//cm/sup 3/ to 2/spl times/10/sup 15//cm/sup 3/.