采用离子注入和从衬底向外扩散的低损耗肖特基二极管

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.838775

Sung-Lyong Kim, Yearn-Ik Choi

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引用次数: 0

摘要

提出了一种采用外延层生长新方法制备的线性渐变掺杂谱线的低损耗肖特基整流器。在磷离子注入后，通过退火和向外扩散得到了锑掺杂的线性梯度掺杂谱。通过二维仿真和扩展电阻探头的测量，验证了采用该方法的肖特基二极管的特性。在额定肖特基二极管为30 V的情况下，当正向压降为0.5 V时，该器件的电流密度比传统器件提高了约28%。

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A low loss Schottky diodes with a linearly graded doping profile using ion-implantation and out-diffusion from substrate

A low loss Schottky rectifier employing a linearly graded doping profile made by new method of epitaxial layer growth is proposed. The linearly graded doping profile is obtained by annealing and out-diffusion from antimony doped substrate after phosphorus ion-implantation. The characteristics of the Schottky diodes employing this method are verified by two dimensional simulation and measurement with SRP (Spreading Resistance Probe). In case of 30 V rated Schottky diodes, the current density of the proposed device is increased about 28% compared with that of the conventional device when forward voltage drop is 0.5 V.

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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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