The X-ray and UV controlled adjustment of MOSFET threshold voltage

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840583

M. Levin, S. Kadmensky, V. Pershenkov

引用次数: 0

Abstract

The technique for precise adjustment of MOS-devices threshold voltages using X-ray and UV irradiation is presented. The adjustment is based on formation of thermally stable charge in the phosphorus doped SiO/sub 2/ layers.

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利用x射线和紫外控制调节MOSFET的阈值电压

介绍了利用x射线和紫外辐照精确调节mos器件阈值电压的技术。这种调整是基于磷掺杂SiO/ sub2 /层中热稳定电荷的形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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