Crossing point current of power P-i-N diodes: impact of lifetime treatment

Abstract

Crossing point current of forward I-V curves at 25 and 125/spl deg/C was measured and simulated for 4.5 kV/320 A power P-i-N diodes irradiated by protons. To achieve agreement of electro-thermal simulation with experiment, temperature dependence of the capture coefficients C/sub n/ and C/sub p/ of the deep levels dominant in condition of heavy injection had to be taken into account. The proton irradiation is shown to decrease the crossing point current which is beneficial for paralleling of diodes under surge conditions.