外延Hg/sub - 1-x/Cd/sub -x/ Te层的远红外光学表征

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840572

P. Nikolić, Z. Dinovic, K. Radulović, D. Vasiljević-Radović, S. Durić, P. Mihajlović, D. Siapkas, T. Zorba

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引用次数: 0

摘要

在室温下，测量了在三种CdTe半绝缘衬底上生长的Hg/sub 0.8/Cd/sub 0.2/Te外延层的远红外(FIR)反射率与波长的关系。采用气相沉积技术制备外延单晶。采用0.2% Br/ sub2 /甲醇蚀刻剂，在最佳衬底上生长外延膜。测量了7种不同厚度Hg/sub 0.8/Cd/sub 0.2/Te薄膜的远红外反射率图。对实验图进行了数值分析，结果表明，类碲化镉和类碲化镉两种模式的横向模值几乎是恒定的。这意味着外延层的组成在接近表面的地方是不变的，距离表面低至0.9 /spl mu/m。

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Characterization of epitaxial Hg/sub 1-x/Cd/sub x/Te layers using the far infrared optical method

Far infrared (FIR) reflectivity versus the wavelength, at room temperature, was measured for Hg/sub 0.8/Cd/sub 0.2/Te epitaxial layers grown on three CdTe semiinsulating substrata. The epitaxial single crystals were grown using vapour deposition techniques. The epitaxial film, grown on the best substratum, was successively etched with 0.2 % Br/sub 2/ methanol etchant. Far IR reflectivity diagrams for seven various thicknesses of Hg/sub 0.8/Cd/sub 0.2/Te film were measured. The experimental diagrams were numerically analyzed and it was shown that the values of optical transverse modes for both HgTe like and CdTe like modes were practically constant. This means that the composition of the epitaxial layer was unchangeable near the surface down to 0.9 /spl mu/m from the surface.

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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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