Semiconductor Science and Technology最新文献_第5页

Understanding the effects of annealing induced structural transformations on the UVC absorbance and other optical properties of RF sputter deposited Ga2O3 thin films 了解退火诱导的结构转变对射频溅射沉积 Ga2O3 薄膜的紫外线吸收率和其他光学特性的影响

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-03-04 DOI: 10.1088/1361-6641/ad2b0b

Keerthana C S, Anjana S Nair, Sreepriya K, Jiya James, Santhosh Kumar, N V Unnikrishnan, Saritha A C

{"title":"Understanding the effects of annealing induced structural transformations on the UVC absorbance and other optical properties of RF sputter deposited Ga2O3 thin films","authors":"Keerthana C S, Anjana S Nair, Sreepriya K, Jiya James, Santhosh Kumar, N V Unnikrishnan, Saritha A C","doi":"10.1088/1361-6641/ad2b0b","DOIUrl":"https://doi.org/10.1088/1361-6641/ad2b0b","url":null,"abstract":"Gallium oxide (Ga2O3) is a transparent material with high absorption in the UVC region of the electromagnetic spectrum and hence is a very important candidate in the field of short wavelength optical device fabrication. A proper understanding of the different optical parameters is necessary for developing more efficient coatings and devices. In this work, changes in the optical behavior of Ga2O3 thin films due to post-deposition annealing (at temperatures 300 °C–900 °C) are discussed in detail. Structural, surface morphological and compositional modifications of the films are identified using the x-ray diffractometer, scanning electron microscopy and x-ray photoelectron spectrometer techniques, respectively. At 900 °C, a highly stable monoclinic <italic toggle=\"yes\">β</italic> phase of Ga2O3 is obtained. The optical transmittance spectra acquired using UV–Vis spectroscopy indicate an improved UVC absorbance of the <italic toggle=\"yes\">β</italic>-Ga2O3 films with an excellent visible transmittance (>80%). The structural transformation from amorphous to crystalline <italic toggle=\"yes\">β</italic>-Ga2O3 phase and the associated reduction in defect density is found to modify other optical attributes, like the bandgap energy, Urbach energy, dispersion parameters, etc.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"45 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140314431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The superiority of the photocatalytic and antibacterial performance of mechanochemically synthesized CdS nanoparticles over solvothermal-prepared ones 机械化学合成的 CdS 纳米粒子的光催化和抗菌性能优于溶热制备的 CdS 纳米粒子

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-02-28 DOI: 10.1088/1361-6641/ad2b08

Gairat Burashev, Batukhan Tatykayev, Matej Baláž, Natalya Khan, Ardak Jumagazieva, Zhanar Iskakbayeva, Anar Seysembekova, Saparbek Tugelbay, Nurshat Turgynbay, Almagul Niyazbayeva, Aleksandr Ilin, Mukhambetkali Burkitbayev, Zhandos Shalabayev

{"title":"The superiority of the photocatalytic and antibacterial performance of mechanochemically synthesized CdS nanoparticles over solvothermal-prepared ones","authors":"Gairat Burashev, Batukhan Tatykayev, Matej Baláž, Natalya Khan, Ardak Jumagazieva, Zhanar Iskakbayeva, Anar Seysembekova, Saparbek Tugelbay, Nurshat Turgynbay, Almagul Niyazbayeva, Aleksandr Ilin, Mukhambetkali Burkitbayev, Zhandos Shalabayev","doi":"10.1088/1361-6641/ad2b08","DOIUrl":"https://doi.org/10.1088/1361-6641/ad2b08","url":null,"abstract":"In this work, we have developed a facile, dry, and environmentally friendly mechanochemical method for the synthesis of cadmium sulfide (m-CdS) nanoparticles in a planetary ball mill using non-toxic precursors. Thiourea was for the first time used as a precursor of sulfide ion in room temperature solid state ball milling synthesis. For comparison of the mechanochemical approach with others, cadmium sulfide nanoparticles were also prepared using the solvothermal method (s-CdS). The crystal structure of cadmium sulfide nanoparticles was studied by XRD, the qualitative chemical band properties were examined by Raman scattering and x-ray photoelectron spectroscopy analysis, and particle morphology and microstructure were investigated by scanning electron microscopy and transmission electron microscopy methods. The sizes of the m-CdS nanoparticles had 5–6 nm in diameter, which is 10 times smaller than the diameter of s-CdS nanorods. The photocatalytic activities of as-prepared cadmium sulfide nanoparticles on the dye degradation and hydrogen production by water splitting were evaluated and the antibacterial activities were also tested. The photocatalytic activity of m-CdS was superior to that of s-CdS in the degradation of Orange II under visible light irradiation. Better results for m-CdS were also evidenced in photocatalytic experiments on hydrogen generation. The maximum rate of hydrogen evolution for m-CdS was 191.9 <italic toggle=\"yes\">µ</italic>molg−1h−1 at the 120th min,while this indicator for s-CdS was only 58.0 <italic toggle=\"yes\">µ</italic>molg−1h−1 at the same irradiation time.The better effect of m-CdS was evidenced also in an antibacterial study (namely against gram-positive bacteria).","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"28 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140005215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs 二氧化硅原子层沉积钝化层厚度对氮化镓基绿色微型发光二极管的影响

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-02-28 DOI: 10.1088/1361-6641/ad2b0a

Youcai Deng, Jinlan Chen, Saijun Li, He Huang, Zhong Liu, Zijun Yan, Shouqiang Lai, Lijie Zheng, Tianzhi Yang, Zhong Chen, Tingzhu Wu

{"title":"The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs","authors":"Youcai Deng, Jinlan Chen, Saijun Li, He Huang, Zhong Liu, Zijun Yan, Shouqiang Lai, Lijie Zheng, Tianzhi Yang, Zhong Chen, Tingzhu Wu","doi":"10.1088/1361-6641/ad2b0a","DOIUrl":"https://doi.org/10.1088/1361-6641/ad2b0a","url":null,"abstract":"In this study, we fabricated 76 × 127 <italic toggle=\"yes\">µ</italic>m2 green GaN-based micro-light-emitting-diodes (micro-LEDs) with atomic-layer-deposited (ALD) SiO2 passivation layers whose thicknesses were 0, 15, and 100 nm. The optoelectrical and communication performances of these devices were measured and analysed. The current-voltage results showed that ALD technology reduced the leakage current and enhanced the forward current of micro-LEDs. Compared with those of micro-LEDs without the passivation layer, the external quantum efficiency of micro-LEDs with 15 and 100 nm-thick SiO2 passivation layers increased by 23.64% and 19.47%, respectively. Furthermore, analysis of the EQE of the samples at room temperature using the ABC + <italic toggle=\"yes\">f</italic>(n) model revealed the differences in the physical mechanisms of green micro-LEDs. Moreover, the communication performance indicated that ALD sidewall passivation reduced the carrier lifetime and improved the communication performance of green micro-LEDs.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"17 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140005779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TMD material investigation for a low hysteresis vdW NCFET logic transistor 用于低磁滞 vdW NCFET 逻辑晶体管的 TMD 材料研究

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-02-28 DOI: 10.1088/1361-6641/ad2b09

I Blessing Meshach Dason, N Kasthuri, D Nirmal

{"title":"TMD material investigation for a low hysteresis vdW NCFET logic transistor","authors":"I Blessing Meshach Dason, N Kasthuri, D Nirmal","doi":"10.1088/1361-6641/ad2b09","DOIUrl":"https://doi.org/10.1088/1361-6641/ad2b09","url":null,"abstract":"Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for low-power applications. Research in device physics can address this problem by selection of proper materials satisfying our requirements. Recently, 2D transition metal di-chalcogenide (TMD) materials are gaining interest because they help alleviate short-channel effects and DIBL problems. The TMD materials are composed by covalently bonded weak van der Waals (vdW) interaction and can be realized as hetero structures with 2D ferro-electric material CuInP2S6 at the gate stack. This paper demonstrates a vdW negative capacitance field effect transistor (NCFET) structure in TCAD and the design was validated for voltage-current Characteristics. Parametric analysis shows MoS2 with phenomenal on/off ratio, narrow hysteresis than the counterparts. Simulation shows that MoS2 vdW NCFET has a high transconductance of 2.36 <italic toggle=\"yes\">µ</italic>S <italic toggle=\"yes\">µ</italic>m−1. A steep slope of 28.54 mV dec−1 is seen in MoS2 vdW NCFET which promises the performance of logic applications at a reduced supply voltage.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"124 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140011074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously 同时具有高壁插效率和高调制带宽的铝梯度对铝镓氮层深紫外发光二极管

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-02-16 DOI: 10.1088/1361-6641/ad238b

Bingyue Cui, Jie Yang, Xingfa Gao, Jiaheng He, Zhe Liu, Zhe Cheng, Yun Zhang

引用次数: 0

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity 具有厚氮化镓吸收层的偏振掺杂 n-p-i-p-n 氮化镓基并联光电晶体管，可实现高响应率

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-02-08 DOI: 10.1088/1361-6641/ad2427

Zhengji Zhu, Chunshuang Chu, Kangkai Tian, Zhan Xuan, Zhiwei Xie, Ke Jiang, Yonghui Zhang, Xiaojuan Sun, Zi-Hui Zhang, Dabing Li

引用次数: 0

Integrated 2T1C pixel circuit with a-Si TFT and NMOS for active matrix mini-LED displays 集成 2T1C 像素电路，采用 a-Si TFT 和 NMOS，用于有源矩阵微型 LED 显示器

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-02-07 DOI: 10.1088/1361-6641/ad238c

Chenming Zhong, Guangyao Li, Xi Zheng, Lihong Zhu, Jianbang Zhuang, Yijun Lu, Zhong Chen, Weijie Guo

引用次数: 0

Design and simulation of high performance β-Ga2O3 super barrier rectifier with a current blocking layer 带电流阻断层的高性能 β-Ga2O3 超级势垒整流器的设计与仿真

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-01-18 DOI: 10.1088/1361-6641/ad1ccb

Zhenghua Wang, Lei Yuan, Bo Peng, Xinming Xie, Yuming Zhang, Renxu Jia

{"title":"Design and simulation of high performance β-Ga2O3 super barrier rectifier with a current blocking layer","authors":"Zhenghua Wang, Lei Yuan, Bo Peng, Xinming Xie, Yuming Zhang, Renxu Jia","doi":"10.1088/1361-6641/ad1ccb","DOIUrl":"https://doi.org/10.1088/1361-6641/ad1ccb","url":null,"abstract":"In this work, a <italic toggle=\"yes\">β</italic>-Ga2O3 super barrier rectifier with a current blocking layer (CSBR) is proposed. Its static characteristics, dynamic characteristics and surge capability are investigated by TCAD simulation. The Baliga’s figure of merit (BFOM) can reach 1.62 GW cm−2 with the on-resistance of 3.68 mΩ cm−2 and the breakdown voltage of 2447 V, exhibiting excellent performance. Foremost, the turn-on and turn-off of the device is controlled by metal-oxide-semiconductor (MOS) structure. The reverse recovery time is 11.2 ns, which is compatible with that of a Schottky diode. Simulation results show that the dimensions of the cells and the proportion of the ohmic contact region in the cells are the key parameters affecting the reverse recovery time. In addition, the CSBR with double-side cooling configuration demonstrates high surge capability. It can sustain a peak surge current density of 5000 A cm−2, which is more than 10 times its forward current (<italic toggle=\"yes\">V</italic>\u0000Forward = 3.0 V). Overall, the proposed structure has a high BFOM, excellent reverse characteristics and high reliability, demonstrating its potential in high voltage applications. Moreover, CSBR can be embedded into Ga2O3-MOSFET as a free-wheeling diode.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"26 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139510086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Terahertz dielectric properties of Fe3O4 thin ﬁlms deposited on Si (100) substrate 沉积在硅（100）衬底上的 Fe3O4 薄膜的太赫兹介电性能

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-01-09 DOI: 10.1088/1361-6641/ad1cca

Ashish Khandelwal, L. S. Sharath Chandra, Shilpam Sharma, A. Sagdeo, Ram Janay Choudhary, M. K. Chattopadhyay

引用次数: 0

A novel split gate trench MOSFET with high-k pillar embedded for higher breakdown voltage 嵌入高 K 柱的新型分裂栅沟槽 MOSFET，可实现更高的击穿电压

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-01-09 DOI: 10.1088/1361-6641/ad1c62

Li Huang, Xiaojin Li, Yabin Sun, Yanling Shi

引用次数: 0