Semiconductor Science and Technology最新文献

Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor 原子层沉积工艺参数对 Hf0.5Zr0.5O2 铁电电容器 TiN 电极的影响

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-12 DOI: 10.1088/1361-6641/ad7637

Hongbo Li, Jian Zhang, Chongyong Guo, Yuanya Liu, Chunyan Liu, Yu Wang, Jianjun Li, Hui Yuan and Xingcheng Jin

{"title":"Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor","authors":"Hongbo Li, Jian Zhang, Chongyong Guo, Yuanya Liu, Chunyan Liu, Yu Wang, Jianjun Li, Hui Yuan and Xingcheng Jin","doi":"10.1088/1361-6641/ad7637","DOIUrl":"https://doi.org/10.1088/1361-6641/ad7637","url":null,"abstract":"Hf0.5Zr0.5O2 (HZO), an innovative and exceptional ferroelectric material, exhibits remarkably high sensitivity, making it particularly vulnerable to electrode effect. Titanium nitride (TiN) is a commonly employed as electrode material in the complementary metal–oxide–semiconductor process. Optimizing the process parameters of preparing TiN film can alter matching degree with HZO capacitor, so as to find the optimal parameters of TiN process to improve ferroelectric property of HZO. In this study, the impact of key process parameters in atomic layer deposition (ALD) TiN, including cycle number, TiCl4 and NH3 pulse time, process temperature (Tp) on film thickness, crystalline phases of TiN, square resistivity (Rs), surface average roughness (Ra) and the root-mean-square roughness (Rq) of TiN film are comprehensively investigated. Through optimization, ∼10 nm ALD TiN film can achieve excellent uniformity of 0.43%, low Rs of 286.9 Ω/□, improved Ra and Rq of 1.82 Å and 2.28 Å. The results show that the maximum 2 times remnant polarization (2Pr) of the HZO ferroelectric capacitor with optimized TiN electrodes can reach 35.17 µC cm−2, and the switching cycle endurance exceeds 8 × 107.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"6 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET 温度对基于人字形和扶手椅形黑磷的二维 MOSFET 电气特性的影响

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-11 DOI: 10.1088/1361-6641/ad7639

Tanmoy Majumder, Chandrima Mukherjee, Sudeb Dasgupta, Udayan Chakraborty, Narottam Das and Abhishek Bhattacharjee

{"title":"The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET","authors":"Tanmoy Majumder, Chandrima Mukherjee, Sudeb Dasgupta, Udayan Chakraborty, Narottam Das and Abhishek Bhattacharjee","doi":"10.1088/1361-6641/ad7639","DOIUrl":"https://doi.org/10.1088/1361-6641/ad7639","url":null,"abstract":"A first time comparative study of the thermal dependence of vital electrical characteristics of two-dimensional metal-oxide-semiconductor field-effect transistors based on black phosphorus for both zigzag and armchair orientations is presented in this paper. It is seen that a higher in-plane thermal conductivity in zigzag direction results in a much better on state current performance which comes at the cost of orders of magnitude increase in gate leakage and a reduced on to off state current ratio. The effect of temperature on threshold voltage (VTH), short channel effects like drain induced barrier lowering, subthreshold swing (SS), Schottky barrier height ΦSB and transconductance behavior in both zigzag and armchair orientations is thoroughly discussed and the inherent physical mechanisms resulting the variations are also presented. Though increase in temperature is found to deteriorate the SS and drain conductance but at the same time, it is found to improve the short channel performance of the devices under consideration.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"13 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The ab initio study of n-type nitrogen and gallium co-doped diamond 氮和镓共掺杂氮型金刚石的 ab initio 研究

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-11 DOI: 10.1088/1361-6641/ad7673

Zhen Wang, Peng Jin, Pengfei Qu, Dunzhou Xu, Xiaodi Huo, Ju Wu and Zhanguo Wang

{"title":"The ab initio study of n-type nitrogen and gallium co-doped diamond","authors":"Zhen Wang, Peng Jin, Pengfei Qu, Dunzhou Xu, Xiaodi Huo, Ju Wu and Zhanguo Wang","doi":"10.1088/1361-6641/ad7673","DOIUrl":"https://doi.org/10.1088/1361-6641/ad7673","url":null,"abstract":"In order to better understand the influence of different complexes on the diamond co-doping system, N and Ga are chosen as co-dopants in diamond. The properties of several substitutional NmGan complexes with vacancy (Va) in the bulk diamond have been investigated by ab initio density functional technique, including their optimized lattice structures, formation energies, binding energies and thermodynamic transition levels. The calculational results show that NmGan complexes in the donor–acceptor–donor (DAD) configuration can provide ionization energies similar to phosphorus-doped diamond. All other complexes provide deep impurity levels. For the DAD configuration, the adsorption process on the diamond surface has been studied to demonstrate the feasibility of growing diamonds containing N-Ga-N in experiments. The desired complex configuration is not uniquely present in the co-doped system. Investigating these properties of different complexes beyond NGaN provides insight into the N and Ga codoped diamond system, yielding a more comprehensive understanding of its potential and limitations. Our research ideas can also be extended to other co-doped systems and help to evaluate other potential co-dopants for diamond.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"166 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga2O3 films by MOCVD 基于 MOCVD 同外延 Ga2O3 薄膜的高响应度自供电肖特基势垒光探测器

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-11 DOI: 10.1088/1361-6641/ad763a

Han Yu, Teng Jiao, Xinming Dang, Yu Han, Yihan Li, Zhen Li, Peiran Chen, Xin Dong, Guoxing Li, Yuantao Zhang and Baolin Zhang

引用次数: 0

Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities 硅、锗和钙杂质掺杂的氮化镓中深缺陷复合物的亚带隙激发光致发光探测

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-11 DOI: 10.1088/1361-6641/ad7638

Xiaorui Wang, Tomáš Vaněk, František Hájek, Vítězslav Jarý, Tomáš Hubáček, Alice Hospodková, Francis Chi-Chung Ling and Shijie Xu

{"title":"Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities","authors":"Xiaorui Wang, Tomáš Vaněk, František Hájek, Vítězslav Jarý, Tomáš Hubáček, Alice Hospodková, Francis Chi-Chung Ling and Shijie Xu","doi":"10.1088/1361-6641/ad7638","DOIUrl":"https://doi.org/10.1088/1361-6641/ad7638","url":null,"abstract":"With the sub-bandgap optical excitation, thermal dynamics of holes among multiple levels in n-type GaN epilayers with different dopants of Si, Ge and C are investigated via measuring and modeling variable-temperature yellow luminescence (YL) band of the samples. In sharp contrast to the case of above-bandgap optical excitation, the variable-temperature YL band of all the studied GaN samples including unintentionally-doped sample exhibit unusual negative thermal quenching (NTQ) behavior, suggesting a possible physical mechanism, namely thermally induced migration of holes from shallower levels to the luminescent deep level. By considering the possible presence of multiple hole levels in the doped GaN samples, a phenomenological model is developed for the thermal transfer of holes among the multi-levels and the interpretation of the observed NTQ phenomenon of the YL band. Different activation energies of 347.9, 520.8 and 348.5 meV are obtained for the Ge-doped, high C-containing, and Si-doped GaN samples, respectively. The results reveal the existence of multiple hole defect levels in the n-type GaN. Possible microstructural origins causing these different hole levels are further argued. The study may shed some light on the nature of various defect complexes in the technologically important GaN epilayers. Combined microstructural and optical investigations need to be further done for elucidating various optically- and electrically-active defect complexes in GaN.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"167 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing photocurrent intensity in layered SiGe heterostructures 优化层状硅锗异质结构中的光电流强度

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-09 DOI: 10.1088/1361-6641/ad70d4

M T Sultan, M L Ciurea, I Stavarache, K A Thórarinsdóttir, U B Arnalds, V Teodorescu, A Manolescu, S Ingvarsson, H G Svavarsson

{"title":"Optimizing photocurrent intensity in layered SiGe heterostructures","authors":"M T Sultan, M L Ciurea, I Stavarache, K A Thórarinsdóttir, U B Arnalds, V Teodorescu, A Manolescu, S Ingvarsson, H G Svavarsson","doi":"10.1088/1361-6641/ad70d4","DOIUrl":"https://doi.org/10.1088/1361-6641/ad70d4","url":null,"abstract":"We study the dependence of photo-spectral intensity on tri- and multilayers of SiO2/[SiGe [<inline-formula>\u0000<tex-math><?CDATA $d_mathrm{SiGe}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn1.gif\"></inline-graphic></inline-formula>]/SiO2]<italic toggle=\"yes\">N</italic> with repetitions <italic toggle=\"yes\">N</italic> = 1 to 10 and thicknesses <inline-formula>\u0000<tex-math><?CDATA $d_mathrm{SiGe} = 5$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub><mml:mo>=</mml:mo><mml:mn>5</mml:mn></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn2.gif\"></inline-graphic></inline-formula>–100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition <italic toggle=\"yes\">N</italic>. The change in intensity could then be further tuned by changing the thickness of the SiGe layers <inline-formula>\u0000<tex-math><?CDATA $d_mathrm{SiGe}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn3.gif\"></inline-graphic></inline-formula>. We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"60 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The adsorption performance of harmful gas (CO, SO) on doped graphene: a first-principle study 掺杂石墨烯对有害气体（CO、SO）的吸附性能：第一原理研究

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-06 DOI: 10.1088/1361-6641/ad752a

Yufeng Liu, Yang Shen, Guanpeng Liu, Wenbing Tu, Jiaming Ni

{"title":"The adsorption performance of harmful gas (CO, SO) on doped graphene: a first-principle study","authors":"Yufeng Liu, Yang Shen, Guanpeng Liu, Wenbing Tu, Jiaming Ni","doi":"10.1088/1361-6641/ad752a","DOIUrl":"https://doi.org/10.1088/1361-6641/ad752a","url":null,"abstract":"The adsorption of gas molecules (CO, SO) by different atoms (Cu, Fe, Pd, Pt, B, N, P, S) doped graphene has been investigated in terms of adsorption energies, charge transfer, and density of states based on the density functional theory. The Result that the metal atoms enhance the interaction of graphene with the above gas molecules much more than the non-metal atoms, and it is due to this strong interaction that the gas molecules (CO, SO) chemisorb on graphene doped with metal atoms. Meanwhile, the metal atom doped graphene is more sensitive to SO molecules. Moreover, the charge transfer of CO/Pd–G is 0.056e, and the adsorption energy is −6.386 eV, and there is a very large deformation of Pt–G after adsorption of SO and the reaction is very violent, with an adsorption energy up to −7.922 eV and a charge transfer up to 0.537e, which is the highest of all systems. Therefore, we believe that Pt–G is suitable for the detection of the SO while Pd–G is suitable for the detection of the CO. In addition, combined with the nature of the work function, we believe that metal-doped graphene has the potential to be a highly sensitive irreversible sensor.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"7 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intensive study on gamma-irradiated PVA/FeCl3/NiO nanocomposites for promising applications: structural, optical and electrical 伽马辐照 PVA/FeCl3/NiO 纳米复合材料应用前景：结构、光学和电学强化研究

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-09-04 DOI: 10.1088/1361-6641/ad689e

R A Zaghlool, S R ElShawadfy, F Mohamed, A S Abdel Moghny

{"title":"Intensive study on gamma-irradiated PVA/FeCl3/NiO nanocomposites for promising applications: structural, optical and electrical","authors":"R A Zaghlool, S R ElShawadfy, F Mohamed, A S Abdel Moghny","doi":"10.1088/1361-6641/ad689e","DOIUrl":"https://doi.org/10.1088/1361-6641/ad689e","url":null,"abstract":"Tuning the optical parameters as well as the electrical conductivity of polymer composites is required to match the needs of optical and/or electrolyte-based energy storage devices. Depending on the choice of filler, the addition of small amounts of inorganic fillers to suitable polymers allows this target to be attained. In the present study, polyvinyl alcohol (PVA)/FeCl3/<italic toggle=\"yes\">x</italic>NiO nanocomposites were prepared using the solution cast method. The structural, optical and electrical properties were investigated before and after irradiating the nanocomposites with gamma radiation at two doses, 300 and 400 Gy. Fourier transform infrared analysis confirmed the interaction of NiO with the PVA/FeCl3 matrix. The nanocomposites show a direct band gap that decreases from 2.47 to 2.25 eV as the NiO content increases from 0% to 7%, while the dc conductivity is increased from 9.15 × 10−8 to 8.46 × 10−7 S cm−1. After irradiation by 400 Gy of gamma radiation, the band gap of the PVA/ FeCl3/7%NiO nanocomposite is increased to 2.33 eV while the dc conductivity decreases to 1.19 × 10−8 S cm−1. On the other hand, the PVA/FeCl3 matrix shows low refractive index, 1.134 at 550 nm, which further increases to 1.213 as the NiO content reaches 7 wt%; this is reduced to 1.211 after exposure to 300 Gy of gamma radiation.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"3 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT 基于 ASM-HEMT 的 GaN HEMT 与温度和栅极电压有关的 I-V 建模

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-08-29 DOI: 10.1088/1361-6641/ad6c7a

Ziwei Zhou, Guipeng Liu, Guijuan Zhao

引用次数: 0

Si-implantation for low ohmic contact resistances in RF GaN HEMTs 在射频 GaN HEMT 中采用 Si-implantation 技术实现低欧姆接触电阻

IF 1.9 4区工程技术

Semiconductor Science and Technology Pub Date : 2024-08-28 DOI: 10.1088/1361-6641/ad70d5

H Yazdani, F Brunner, A Thies, H J Würfl, O Hilt

引用次数: 0