Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-08-29 DOI:10.1088/1361-6641/ad6c7a

Ziwei Zhou, Guipeng Liu, Guijuan Zhao

引用次数: 0

Abstract

In this paper, a temperature- and gate voltage-dependent current–voltage (I–V) model for gallium nitride (GaN) high electron mobility transistors (HEMTs) devices is studied. To help researchers and designers simulate devices in the absence of experimental data and improve the parameter extraction efficiency, the temperature and gate voltage dependence of mobility are discussed and incorporated into the proposed model, which is revised from the standard advanced SPICE model (ASM) for GaN HEMTs. The mobility variations with the gate voltage from −2 V to 6 V and the temperature from 10 K to 1000 K are analyzed. The simulation results of our model are compared with the standard ASM-HEMT model, and the output and transfer characteristics of the device from 270 K to 420 K are simulated. Therefore, our model may simulate various applications of GaN HEMTs at different gate voltages and temperatures in the early stages of design and research.

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基于 ASM-HEMT 的 GaN HEMT 与温度和栅极电压有关的 I-V 建模

本文研究了氮化镓（GaN）高电子迁移率晶体管（HEMT）器件与温度和栅极电压有关的电流电压（I-V）模型。为了帮助研究人员和设计人员在缺乏实验数据的情况下模拟器件并提高参数提取效率，本文讨论了迁移率与温度和栅极电压的关系，并将其纳入了所提出的模型，该模型是在氮化镓高电子迁移率晶体管的标准高级 SPICE 模型 (ASM) 基础上修订而成的。分析了栅极电压从 -2 V 到 6 V 以及温度从 10 K 到 1000 K 时的迁移率变化。我们将模型的模拟结果与标准 ASM-HEMT 模型进行了比较，并模拟了器件在 270 K 至 420 K 温度范围内的输出和传输特性。因此，在设计和研究的早期阶段，我们的模型可以模拟 GaN HEMT 在不同栅极电压和温度下的各种应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.