Optimizing photocurrent intensity in layered SiGe heterostructures

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-09-09 DOI:10.1088/1361-6641/ad70d4

M T Sultan, M L Ciurea, I Stavarache, K A Thórarinsdóttir, U B Arnalds, V Teodorescu, A Manolescu, S Ingvarsson, H G Svavarsson

{"title":"Optimizing photocurrent intensity in layered SiGe heterostructures","authors":"M T Sultan, M L Ciurea, I Stavarache, K A Thórarinsdóttir, U B Arnalds, V Teodorescu, A Manolescu, S Ingvarsson, H G Svavarsson","doi":"10.1088/1361-6641/ad70d4","DOIUrl":null,"url":null,"abstract":"We study the dependence of photo-spectral intensity on tri- and multilayers of SiO2/[SiGe [<inline-formula>\n<tex-math><?CDATA $d_\\mathrm{SiGe}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn1.gif\"></inline-graphic></inline-formula>]/SiO2]<italic toggle=\"yes\">N</italic> with repetitions <italic toggle=\"yes\">N</italic> = 1 to 10 and thicknesses <inline-formula>\n<tex-math><?CDATA $d_\\mathrm{SiGe} = 5$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub><mml:mo>=</mml:mo><mml:mn>5</mml:mn></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn2.gif\"></inline-graphic></inline-formula>–100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition <italic toggle=\"yes\">N</italic>. The change in intensity could then be further tuned by changing the thickness of the SiGe layers <inline-formula>\n<tex-math><?CDATA $d_\\mathrm{SiGe}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn3.gif\"></inline-graphic></inline-formula>. We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"60 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad70d4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

We study the dependence of photo-spectral intensity on tri- and multilayers of SiO₂/[SiGe [

dSiGe

]/SiO₂]_N with repetitions N = 1 to 10 and thicknesses

dSiGe=5

–100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition N. The change in intensity could then be further tuned by changing the thickness of the SiGe layers

dSiGe

. We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.

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优化层状硅锗异质结构中的光电流强度

我们研究了三层和多层 SiO2/[SiGe[dSiGe]/SiO2]N（重复次数 N = 1 至 10，厚度 dSiGe=5-100 nm）光光谱强度的依赖性。光电流分析显示了双峰光谱特征。对三层和多层结构的光电流分析比较表明，在多层结构中，光光谱强度随着重复次数 N 的增加而增加。我们将强度变化归因于拉伸应变的增加、Ge 原子浓度的增加和 SiGe 纳米团簇尺寸的减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.