M T Sultan, M L Ciurea, I Stavarache, K A Thórarinsdóttir, U B Arnalds, V Teodorescu, A Manolescu, S Ingvarsson, H G Svavarsson
{"title":"优化层状硅锗异质结构中的光电流强度","authors":"M T Sultan, M L Ciurea, I Stavarache, K A Thórarinsdóttir, U B Arnalds, V Teodorescu, A Manolescu, S Ingvarsson, H G Svavarsson","doi":"10.1088/1361-6641/ad70d4","DOIUrl":null,"url":null,"abstract":"We study the dependence of photo-spectral intensity on tri- and multilayers of SiO<sub>2</sub>/[SiGe [<inline-formula>\n<tex-math><?CDATA $d_\\mathrm{SiGe}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn1.gif\"></inline-graphic></inline-formula>]/SiO<sub>2</sub>]<sub><italic toggle=\"yes\">N</italic></sub> with repetitions <italic toggle=\"yes\">N</italic> = 1 to 10 and thicknesses <inline-formula>\n<tex-math><?CDATA $d_\\mathrm{SiGe} = 5$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub><mml:mo>=</mml:mo><mml:mn>5</mml:mn></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn2.gif\"></inline-graphic></inline-formula>–100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition <italic toggle=\"yes\">N</italic>. The change in intensity could then be further tuned by changing the thickness of the SiGe layers <inline-formula>\n<tex-math><?CDATA $d_\\mathrm{SiGe}$?></tex-math><mml:math overflow=\"scroll\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\"sstad70d4ieqn3.gif\"></inline-graphic></inline-formula>. We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimizing photocurrent intensity in layered SiGe heterostructures\",\"authors\":\"M T Sultan, M L Ciurea, I Stavarache, K A Thórarinsdóttir, U B Arnalds, V Teodorescu, A Manolescu, S Ingvarsson, H G Svavarsson\",\"doi\":\"10.1088/1361-6641/ad70d4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the dependence of photo-spectral intensity on tri- and multilayers of SiO<sub>2</sub>/[SiGe [<inline-formula>\\n<tex-math><?CDATA $d_\\\\mathrm{SiGe}$?></tex-math><mml:math overflow=\\\"scroll\\\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\\\"sstad70d4ieqn1.gif\\\"></inline-graphic></inline-formula>]/SiO<sub>2</sub>]<sub><italic toggle=\\\"yes\\\">N</italic></sub> with repetitions <italic toggle=\\\"yes\\\">N</italic> = 1 to 10 and thicknesses <inline-formula>\\n<tex-math><?CDATA $d_\\\\mathrm{SiGe} = 5$?></tex-math><mml:math overflow=\\\"scroll\\\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub><mml:mo>=</mml:mo><mml:mn>5</mml:mn></mml:mrow></mml:math><inline-graphic xlink:href=\\\"sstad70d4ieqn2.gif\\\"></inline-graphic></inline-formula>–100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition <italic toggle=\\\"yes\\\">N</italic>. The change in intensity could then be further tuned by changing the thickness of the SiGe layers <inline-formula>\\n<tex-math><?CDATA $d_\\\\mathrm{SiGe}$?></tex-math><mml:math overflow=\\\"scroll\\\"><mml:mrow><mml:msub><mml:mi>d</mml:mi><mml:mrow><mml:mi>SiGe</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><inline-graphic xlink:href=\\\"sstad70d4ieqn3.gif\\\"></inline-graphic></inline-formula>. We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad70d4\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad70d4","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
我们研究了三层和多层 SiO2/[SiGe[dSiGe]/SiO2]N(重复次数 N = 1 至 10,厚度 dSiGe=5-100 nm)光光谱强度的依赖性。光电流分析显示了双峰光谱特征。对三层和多层结构的光电流分析比较表明,在多层结构中,光光谱强度随着重复次数 N 的增加而增加。我们将强度变化归因于拉伸应变的增加、Ge 原子浓度的增加和 SiGe 纳米团簇尺寸的减小。
Optimizing photocurrent intensity in layered SiGe heterostructures
We study the dependence of photo-spectral intensity on tri- and multilayers of SiO2/[SiGe [dSiGe]/SiO2]N with repetitions N = 1 to 10 and thicknesses dSiGe=5–100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition N. The change in intensity could then be further tuned by changing the thickness of the SiGe layers dSiGe. We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.