Intensive study on gamma-irradiated PVA/FeCl3/NiO nanocomposites for promising applications: structural, optical and electrical

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-09-04 DOI:10.1088/1361-6641/ad689e

R A Zaghlool, S R ElShawadfy, F Mohamed, A S Abdel Moghny

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Abstract

Tuning the optical parameters as well as the electrical conductivity of polymer composites is required to match the needs of optical and/or electrolyte-based energy storage devices. Depending on the choice of filler, the addition of small amounts of inorganic fillers to suitable polymers allows this target to be attained. In the present study, polyvinyl alcohol (PVA)/FeCl₃/xNiO nanocomposites were prepared using the solution cast method. The structural, optical and electrical properties were investigated before and after irradiating the nanocomposites with gamma radiation at two doses, 300 and 400 Gy. Fourier transform infrared analysis confirmed the interaction of NiO with the PVA/FeCl₃ matrix. The nanocomposites show a direct band gap that decreases from 2.47 to 2.25 eV as the NiO content increases from 0% to 7%, while the dc conductivity is increased from 9.15 × 10⁻⁸ to 8.46 × 10⁻⁷ S cm⁻¹. After irradiation by 400 Gy of gamma radiation, the band gap of the PVA/ FeCl₃/7%NiO nanocomposite is increased to 2.33 eV while the dc conductivity decreases to 1.19 × 10⁻⁸ S cm⁻¹. On the other hand, the PVA/FeCl₃ matrix shows low refractive index, 1.134 at 550 nm, which further increases to 1.213 as the NiO content reaches 7 wt%; this is reduced to 1.211 after exposure to 300 Gy of gamma radiation.

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伽马辐照 PVA/FeCl3/NiO 纳米复合材料应用前景：结构、光学和电学强化研究

为了满足光学和/或电解质储能设备的需要，需要对聚合物复合材料的光学参数和导电性能进行调整。根据填料的选择，在合适的聚合物中添加少量无机填料可以实现这一目标。本研究采用溶液浇铸法制备了聚乙烯醇（PVA）/氯化铁/氧化镍纳米复合材料。在对纳米复合材料进行 300 Gy 和 400 Gy 两种剂量的伽马射线辐照前后，对其结构、光学和电学特性进行了研究。傅立叶变换红外分析证实了氧化镍与 PVA/FeCl3 基质的相互作用。随着氧化镍含量从 0% 增加到 7%，纳米复合材料的直接带隙从 2.47 eV 减小到 2.25 eV，而直流电导从 9.15 × 10-8 S cm-1 增加到 8.46 × 10-7 S cm-1。经 400 Gy 伽马射线辐照后，PVA/FeCl3/7%NiO 纳米复合材料的带隙增至 2.33 eV，而直流电导则降至 1.19 × 10-8 S cm-1。另一方面，PVA/FeCl3 基体显示出较低的折射率，在 550 纳米波长处为 1.134，当氧化镍含量达到 7 wt%时，折射率进一步上升到 1.213；在暴露于 300 Gy 伽马辐射后，折射率降至 1.211。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.