Si-implantation for low ohmic contact resistances in RF GaN HEMTs

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-08-28 DOI:10.1088/1361-6641/ad70d5

H Yazdani, F Brunner, A Thies, H J Würfl, O Hilt

引用次数: 0

Abstract

In this work, Si implantation and activation for lowering the ohmic contact resistance (R_c) of mm-wave GaN HEMTs has been investigated. Various combinations of annealing temperature/duration and implantation doses were tested. Dopant activation was performed using a modified procedure in an MOCVD tool, involving fast temperature ramping and annealing the samples for 8 min at 1150 °C. Thereby, ∼0.02 ± 0.01 Ω mm contact resistance was achieved on a fully doped region and ∼0.1 ± 0.02 Ω mm when only the source and drain contact region was n-type doped. For comparison, a well-established alloyed Ti/Al/Ni/Au ohmic contact scheme without implantation, was used as reference resulting in an average R_c ∼ 0.34 ± 0.12 Ω mm on the same wafer. Besides the three times lowered contact resistance the implanted contacts also showed a significantly improved on-wafer homogeneity.

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在射频 GaN HEMT 中采用 Si-implantation 技术实现低欧姆接触电阻

在这项工作中，研究了如何通过硅植入和活化来降低毫米波 GaN HEMT 的欧姆接触电阻 (Rc)。测试了退火温度/持续时间和植入剂量的各种组合。掺杂剂活化是在 MOCVD 工具中使用改进的程序进行的，包括快速升温和样品在 1150 °C 下退火 8 分钟。因此，完全掺杂区域的接触电阻为 0.02 ± 0.01 Ω mm，而仅在源极和漏极接触区域进行 n 型掺杂时，接触电阻为 0.1 ± 0.02 Ω mm。为了进行比较，在同一晶圆上，采用了成熟的未植入合金的钛/铝/镍/金欧姆接触方案作为参考，结果平均 Rc ∼ 0.34 ± 0.12 Ω mm。除了接触电阻降低了三倍之外，植入式触点还显著改善了晶圆上的均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.