Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-09-12 DOI:10.1088/1361-6641/ad7637

Hongbo Li, Jian Zhang, Chongyong Guo, Yuanya Liu, Chunyan Liu, Yu Wang, Jianjun Li, Hui Yuan and Xingcheng Jin

{"title":"Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor","authors":"Hongbo Li, Jian Zhang, Chongyong Guo, Yuanya Liu, Chunyan Liu, Yu Wang, Jianjun Li, Hui Yuan and Xingcheng Jin","doi":"10.1088/1361-6641/ad7637","DOIUrl":null,"url":null,"abstract":"Hf0.5Zr0.5O2 (HZO), an innovative and exceptional ferroelectric material, exhibits remarkably high sensitivity, making it particularly vulnerable to electrode effect. Titanium nitride (TiN) is a commonly employed as electrode material in the complementary metal–oxide–semiconductor process. Optimizing the process parameters of preparing TiN film can alter matching degree with HZO capacitor, so as to find the optimal parameters of TiN process to improve ferroelectric property of HZO. In this study, the impact of key process parameters in atomic layer deposition (ALD) TiN, including cycle number, TiCl4 and NH3 pulse time, process temperature (Tp) on film thickness, crystalline phases of TiN, square resistivity (Rs), surface average roughness (Ra) and the root-mean-square roughness (Rq) of TiN film are comprehensively investigated. Through optimization, ∼10 nm ALD TiN film can achieve excellent uniformity of 0.43%, low Rs of 286.9 Ω/□, improved Ra and Rq of 1.82 Å and 2.28 Å. The results show that the maximum 2 times remnant polarization (2Pr) of the HZO ferroelectric capacitor with optimized TiN electrodes can reach 35.17 µC cm−2, and the switching cycle endurance exceeds 8 × 107.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"6 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad7637","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Hf0.5Zr0.5O2 (HZO), an innovative and exceptional ferroelectric material, exhibits remarkably high sensitivity, making it particularly vulnerable to electrode effect. Titanium nitride (TiN) is a commonly employed as electrode material in the complementary metal–oxide–semiconductor process. Optimizing the process parameters of preparing TiN film can alter matching degree with HZO capacitor, so as to find the optimal parameters of TiN process to improve ferroelectric property of HZO. In this study, the impact of key process parameters in atomic layer deposition (ALD) TiN, including cycle number, TiCl4 and NH3 pulse time, process temperature (Tp) on film thickness, crystalline phases of TiN, square resistivity (Rs), surface average roughness (Ra) and the root-mean-square roughness (Rq) of TiN film are comprehensively investigated. Through optimization, ∼10 nm ALD TiN film can achieve excellent uniformity of 0.43%, low Rs of 286.9 Ω/□, improved Ra and Rq of 1.82 Å and 2.28 Å. The results show that the maximum 2 times remnant polarization (2Pr) of the HZO ferroelectric capacitor with optimized TiN electrodes can reach 35.17 µC cm−2, and the switching cycle endurance exceeds 8 × 107.

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原子层沉积工艺参数对 Hf0.5Zr0.5O2 铁电电容器 TiN 电极的影响

Hf0.5Zr0.5O2 (HZO) 是一种创新的特殊铁电材料，具有极高的灵敏度，因此特别容易受到电极效应的影响。氮化钛（TiN）是互补金属-氧化物-半导体工艺中常用的电极材料。优化制备 TiN 薄膜的工艺参数可以改变与 HZO 电容器的匹配度，从而找到最佳的 TiN 工艺参数来改善 HZO 的铁电特性。本研究全面考察了原子层沉积（ALD）TiN 关键工艺参数，包括循环次数、TiCl4 和 NH3 脉冲时间、工艺温度（Tp）对薄膜厚度、TiN 晶相、方波电阻率（Rs）、表面平均粗糙度（Ra）和均方根粗糙度（Rq）的影响。结果表明，采用优化 TiN 电极的 HZO 铁电电容器的最大 2 倍残余极化（2Pr）可达到 35.17 µC cm-2，开关周期耐久性超过 8 × 107。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.