基于 MOCVD 同外延 Ga2O3 薄膜的高响应度自供电肖特基势垒光探测器

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-09-11 DOI:10.1088/1361-6641/ad763a

Han Yu, Teng Jiao, Xinming Dang, Yu Han, Yihan Li, Zhen Li, Peiran Chen, Xin Dong, Guoxing Li, Yuantao Zhang and Baolin Zhang

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引用次数: 0

摘要

Ga2O3 是一种快速发展的宽禁带半导体，可用于日光盲区紫外线光电探测器（PDs）。目前，由异质外延 Ga2O3 薄膜制成的异质结自供电型 PD 的响应率和响应速度较低。在这项工作中，我们基于同外延生长的高质量 Ga2O3 薄膜制作了肖特基势垒 PD，该器件在不同偏置电压下均表现出高性能和高响应率。特别是，该器件在 0 V 时的响应率达到 90.3 mA W-1，光暗电流比 (PDCR) 为 3.2 × 104，检测率为 3.8 × 1013 Jones。这些结果证明了同外延 Ga2O3 薄膜在高性能器件领域的优势。

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Self-powered Schottky barrier photodetector with high responsivity based on homoepitaxial Ga2O3 films by MOCVD

Ga2O3 is a fast-developing wide band semiconductor for solar-blind ultraviolet photodetectors (PDs) applications. The heterojunction self-powered PDs fabricated from heteroepitaxial Ga2O3 films currently have low responsivity and response speed. In this work, we fabricated Schottky barrier PDs based on homoepitaxially grown high quality Ga2O3 films, which exhibited high performance with high responsivity at different bias voltages. In particular, the device achieves a responsivity of 90.3 mA W−1, a photo-to-dark current ratio (PDCR) of 3.2 × 104 and a detectivity of 3.8 × 1013 Jones at 0 V. In addition, a response time of superior to 5 ms is achieved. The results demonstrate the advantages of homoepitaxial Ga2O3 films in the field of high-performance devices.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.