TMD material investigation for a low hysteresis vdW NCFET logic transistor

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-02-28 DOI:10.1088/1361-6641/ad2b09

I Blessing Meshach Dason, N Kasthuri, D Nirmal

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引用次数: 0

Abstract

Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for low-power applications. Research in device physics can address this problem by selection of proper materials satisfying our requirements. Recently, 2D transition metal di-chalcogenide (TMD) materials are gaining interest because they help alleviate short-channel effects and DIBL problems. The TMD materials are composed by covalently bonded weak van der Waals (vdW) interaction and can be realized as hetero structures with 2D ferro-electric material CuInP₂S₆ at the gate stack. This paper demonstrates a vdW negative capacitance field effect transistor (NCFET) structure in TCAD and the design was validated for voltage-current Characteristics. Parametric analysis shows MoS₂ with phenomenal on/off ratio, narrow hysteresis than the counterparts. Simulation shows that MoS₂ vdW NCFET has a high transconductance of 2.36 µS µm⁻¹. A steep slope of 28.54 mV dec⁻¹ is seen in MoS₂ vdW NCFET which promises the performance of logic applications at a reduced supply voltage.

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用于低磁滞 vdW NCFET 逻辑晶体管的 TMD 材料研究

传统 MOSFET 不可避免地存在玻尔兹曼极限，这使其无法用于低功耗应用。器件物理学研究可以通过选择满足我们要求的适当材料来解决这一问题。最近，二维过渡金属二掺杂镓（TMD）材料正受到越来越多的关注，因为它们有助于缓解短沟道效应和 DIBL 问题。TMD 材料由共价键结合的弱范德华（vdW）相互作用组成，可以与二维铁电材料 CuInP2S6 在栅堆上实现异质结构。本文在 TCAD 中演示了 vdW 负电容场效应晶体管（NCFET）结构，并对设计进行了电压-电流特性验证。参数分析表明，与同类产品相比，MoS2 具有惊人的导通/关断比和较窄的滞后。仿真显示，MoS2 vdW NCFET 的跨导率高达 2.36 µS µm-1。MoS2 vdW NCFET 具有 28.54 mV dec-1 的陡峭斜率，有望在降低电源电压的情况下实现逻辑应用性能。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.