碲化镉和硒化镉薄膜沉积参数对用于太阳能电池的碲化镉/硒化镉吸收体结构性能的影响

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-01-08 DOI:10.1088/1361-6641/ad1c4d

A. Çiriş, Y. Atasoy, M. Tomakin, Abdullah Karaca, T. Küçükömeroğlu, E. Bacaksız

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引用次数: 0

摘要

本研究探讨了在不同基底温度下通过真空蒸发沉积 CdSeTe 和 CdTe 层对 CdSeTe/CdTe 叠层性能的影响。首先，在 150、200 和 250°C 的基底温度下生长堆叠结构中的碲化镉层，然后在 150、200 和 250°C 的基底温度下在用最佳温度生产的碲化镉上涂覆碲化镉层。对 CdSeTe/CdTe 叠层中的 CdSeTe 和 CdTe 薄膜采用高达 150°C 的基底温度，表明存在 Te 和/或氧化物相以及合金化，同时在较高温度下相结构更加稳定。在 CdSeTe/CdTe 叠层中，CdSeTe 基底温度的升高促进了合金化，而 CdTe 基底温度的升高则削弱了合金化。由此得出结论，在所应用的实验条件下，250°C 和 200°C 的衬底温度分别更适合 CdSeTe 和 CdTe，它们具有分级合金结构、合适的吸收位点和更均匀的表面形貌，更适合潜在的太阳能电池应用。因此，对叠层中的 CdSeTe 或 CdTe 施加衬底温度可用作控制叠层结构特性的工具。

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Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications

In this study, the effect of depositing CdSeTe and CdTe layers at different substrate temperatures by evaporation in vacuum on the properties of the CdSeTe/CdTe stacks was investigated. First, CdSeTe layers in stack structure were grown at substrate temperatures of 150, 200 and 250°C and then CdTe layers on the CdSeTe produced with the optimum temperature were coated at substrate temperatures of 150, 200 and 250°C. The employing of substrate temperatures up to 150°C on both CdSeTe and CdTe films in CdSeTe/CdTe stacks demonstrated the presence of Te and/or oxide phases as well as the alloying, while more stable phase structures at higher temperatures. In the CdSeTe/CdTe stack, the increase in substrate temperature of CdSeTe promoted the alloying, while it weakened the alloy in which was applied in CdTe. It was concluded that under the applied experimental conditions, substrate temperatures of 250°C and 200°C with the graded alloying structure, suitable absorption sites, more homogeneous surface morphology for potential solar cell applications would be more suitable for CdSeTe and CdTe, respectively. As a result, the application of substrate temperature to CdSeTe or CdTe in the stacks can be used as a tool to control the properties of the stack structure.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.