Terahertz dielectric properties of Fe3O4 thin ﬁlms deposited on Si (100) substrate

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-01-09 DOI:10.1088/1361-6641/ad1cca

Ashish Khandelwal, L. S. Sharath Chandra, Shilpam Sharma, A. Sagdeo, Ram Janay Choudhary, M. K. Chattopadhyay

引用次数: 0

Abstract

Fe3O4 is considered to be a promising material for terahertz spintronic applications as well as for stealth technology. However, the optical properties of Fe3O4 in the thin ﬁlm form at terahertz frequencies are not reported in literature. In this article, we present the frequency and temperature dependence of dielectric permittivity (ε1) and optical conductivity (σ1) of Fe3O4 ﬁlms deposited on Si substrate. The σ1 of these ﬁlms show absorption peaks related to charge localization and shallow impurities. It is also observed that the Fe2O3/Fe3O4 composite ﬁlms have large σ1 and ε1 indicating their potential use for stealth technology applications. The overall optical properties are found to depend strongly on the microstructure and defects, such as, the grain size and the presence of grain boundaries, anti-phase boundaries, strain disorder due to lattice mismatch and/or the Fe+2/Fe+3 ratio.

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沉积在硅（100）衬底上的 Fe3O4 薄膜的太赫兹介电性能

在太赫兹自旋电子应用和隐形技术方面，Fe3O4 被认为是一种很有前途的材料。然而，关于薄膜形式的 Fe3O4 在太赫兹频率下的光学特性，文献中并没有报道。在本文中，我们介绍了沉积在硅衬底上的 Fe3O4 薄膜的介电常数（ε1）和光导率（σ1）的频率和温度依赖性。这些薄膜的 σ1 显示出与电荷局域化和浅杂质有关的吸收峰。此外，还观察到 Fe2O3/Fe3O4 复合薄膜具有较大的 σ1 和 ε1，这表明它们具有应用于隐形技术的潜力。研究发现，整体光学特性在很大程度上取决于微观结构和缺陷，如晶粒大小、晶界的存在、反相界、晶格失配导致的应变紊乱和/或 Fe+2/Fe+3 比率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.