The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-02-28 DOI:10.1088/1361-6641/ad2b0a

Youcai Deng, Jinlan Chen, Saijun Li, He Huang, Zhong Liu, Zijun Yan, Shouqiang Lai, Lijie Zheng, Tianzhi Yang, Zhong Chen, Tingzhu Wu

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Abstract

In this study, we fabricated 76 × 127 µm² green GaN-based micro-light-emitting-diodes (micro-LEDs) with atomic-layer-deposited (ALD) SiO₂ passivation layers whose thicknesses were 0, 15, and 100 nm. The optoelectrical and communication performances of these devices were measured and analysed. The current-voltage results showed that ALD technology reduced the leakage current and enhanced the forward current of micro-LEDs. Compared with those of micro-LEDs without the passivation layer, the external quantum efficiency of micro-LEDs with 15 and 100 nm-thick SiO₂ passivation layers increased by 23.64% and 19.47%, respectively. Furthermore, analysis of the EQE of the samples at room temperature using the ABC + f(n) model revealed the differences in the physical mechanisms of green micro-LEDs. Moreover, the communication performance indicated that ALD sidewall passivation reduced the carrier lifetime and improved the communication performance of green micro-LEDs.

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二氧化硅原子层沉积钝化层厚度对氮化镓基绿色微型发光二极管的影响

在这项研究中，我们制作了 76 × 127 µm2 绿色氮化镓基微型发光二极管（micro-LED），其原子层沉积（ALD）二氧化硅钝化层的厚度分别为 0、15 和 100 nm。对这些器件的光电和通信性能进行了测量和分析。电流-电压结果表明，ALD 技术降低了微型 LED 的漏电流，提高了正向电流。与没有钝化层的微型 LED 相比，具有 15 nm 和 100 nm 厚 SiO2 钝化层的微型 LED 的外部量子效率分别提高了 23.64% 和 19.47%。此外，利用 ABC + f(n) 模型分析了样品在室温下的 EQE，揭示了绿色微型 LED 物理机制的差异。此外，通信性能表明，ALD 侧壁钝化降低了绿色微型 LED 的载流子寿命，提高了其通信性能。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.