A novel split gate trench MOSFET with high-k pillar embedded for higher breakdown voltage

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-01-09 DOI:10.1088/1361-6641/ad1c62

Li Huang, Xiaojin Li, Yabin Sun, Yanling Shi

引用次数: 0

Abstract

In this study, a novel split gate trench MOSFET with a high-k pillar (HKP SGT-MOS) embedded is proposed. Lots of electric displacement lines are allowed to enter into high-k pillar introduced beneath split gate, thus relieving the crowding of electric field at bottom corner. Therefore, the HKP SGT-MOS can achieve a higher breakdown voltage(BV) without sacrificing its forward conduction. Various dielectrics for the high-k pillar, including SiO2, Si3N4, Al2O3 and HfO2, are investigated and the results reveal that HfO2 has the largest FOM and BV. The characteristics of HKP SGT-MOS have also been validated by TCAD simulation, and it is shown that the BV and figure of merit (FOM=BV2/Ron,sp) are 258.3V and 37.46 MW/cm2, achieving 36.7% and 87.02% improvement compared to the conventional SGT-MOS, 18.4% and 38.59% improvement compared to the SGT-MOS with short split-gate. Moreover, the influences of drift doping concentration, mesa width, length and width of split gate/high-k pillar are also studied to optimize the HKP SGT-MOS.

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嵌入高 K 柱的新型分裂栅沟槽 MOSFET，可实现更高的击穿电压

本研究提出了一种嵌入高 K 柱的新型分裂栅沟槽 MOSFET（HKP SGT-MOS）。该器件允许大量电位移线进入分裂栅下引入的高 K 柱，从而缓解了底角的电场拥挤。因此，HKP SGT-MOS 可以在不牺牲正向传导的情况下获得更高的击穿电压（BV）。研究了用于高 K 柱的各种电介质，包括 SiO2、Si3N4、Al2O3 和 HfO2，结果表明 HfO2 具有最大的 FOM 和 BV。TCAD 仿真也验证了 HKP SGT-MOS 的特性，结果表明其 BV 和优点系数（FOM=BV2/Ron,sp）分别为 258.3V 和 37.46 MW/cm2，与传统 SGT-MOS 相比分别提高了 36.7% 和 87.02%，与短分裂栅 SGT-MOS 相比分别提高了 18.4% 和 38.59%。此外，还研究了漂移掺杂浓度、网格宽度、分裂栅/高 k 柱的长度和宽度对优化 HKP SGT-MOS 的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.